Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Plasma treatment device and substrate surface treatment device

A technology for processing devices and plasmas, applied to plasmas, lighting devices, electrical components, etc., to achieve the effect of small quality deviation and high reliability

Inactive Publication Date: 2007-11-07
INNOLUX CORP +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using UV-O 3 When cleaning, there is less damage to the resin structures 26, 22, 26 around the anode 24, but on the other hand, because a functional organic film cannot be continuously formed on the surface of the electrode during the cleaning operation, additional equipment is required

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma treatment device and substrate surface treatment device
  • Plasma treatment device and substrate surface treatment device
  • Plasma treatment device and substrate surface treatment device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] An embodiment of the present invention will be described below with reference to FIG. 1 . In the figure, 34 is the plasma generation chamber that excites and supplies gas to generate plasma, and a plurality of gas pumps 36, 38 opened and closed by valves 36a, 38a, 40a are connected through a flow regulator 42 in the gas supply port 34a at the lower end of the chamber. , 40. 44 is an induction coil wound on the outer periphery of the plasma generation chamber 34, and is connected to a high frequency oscillator 48 through a distribution circuit 46 to provide high frequency current to stimulate the gas supplied to the plasma generation chamber 34 into a plasma state. 50 is a decompression chamber, and its peripheral surface is provided with an inlet and outlet omitted in the figure. The bottom 50a of this chamber communicates with the plasma generation chamber 34, and plasma gas is supplied from the plasma supply port (plasma introduction part) 34b. 52 is a substrate (plas...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a plasma treatment device by which cleaning operation and organic film forming operation can be continuously conducted by the same equipment, and even when a member to be treated by plasma treatment is a member exposing a conductive thin film to a part of an organic film with which a substrate is coated, the surface of the conductive thin film can be cleaned without damaging coat resin. The plasma treatment device comprises a plasma generation room 34 for generating plasma by activating supplied gas; a pressure reducing chamber 50 connected to the plasma generation room 34 and capable of storing a member 52 to be treated by plasma treatment; and a diffuser 58 capable of guiding plasma to a gas passage in the plasma generation room 34 in an inclination direction, and leading the plasma into the pressure reducing chamber 50 while diffusing the plasma.

Description

field of invention [0001] The present invention relates to a plasma processing device for processing the surface of a substrate, in particular to a plasma processing device capable of performing uniform processing on a substrate surface whose area is larger than the cross-sectional area of ​​the plasma introduction part, and in particular to a plasma processing device capable of sequentially processing with different gas plasmas A substrate surface treatment device for a conductive film and a conductive film of a substrate on which a cladding resin is formed. Background technique [0002] When forming a conductive film on a substrate such as a semiconductor device or an organic EL device, the characteristics of the conductive film can be improved and stabilized by performing plasma treatment on the surface of the conductive film. [0003] In an organic EL device, a thin film containing fluorescent and phosphorescent organic compounds is interposed between an anode and a cath...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/00H05B33/10H01L21/306H01L21/30H05H1/46C23F1/00C23F4/00H01J37/32H01L21/304H01L21/768H01L23/522H01L51/50H01L51/52H01L51/56H05B33/14H05B33/26
CPCH01L51/0021H01L51/5206H01J37/32357H10K59/122H10K71/60H10K59/80518H10K50/818
Inventor 村山浩二藤本浩树
Owner INNOLUX CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com