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Ferroelectric memory device and its programming method

A technology of ferroelectric storage and devices, which is applied in the direction of static memory, read-only memory, digital memory information, etc., and can solve problems such as irrecoverability

Inactive Publication Date: 2007-11-21
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In redundant processing methods with conventional metal / polysilicon wires or fuses, cannot be recovered due to physical removal by laser cutting

Method used

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  • Ferroelectric memory device and its programming method
  • Ferroelectric memory device and its programming method
  • Ferroelectric memory device and its programming method

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Experimental program
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Embodiment Construction

[0044] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

[0045] Fig. 4 is a schematic structural view of a ferroelectric memory device according to a preferred embodiment of the present invention.

[0046]The reference voltage generator supplies a reference voltage to the sense amplifier. In a read mode, the sense amplifier compares a reference voltage with a voltage output from a bit line of the memory cell array, and then outputs a logic level corresponding to data of the memory cell through the I / O buffer. In the write mode, the sense amplifier compares the reference voltage and the signal voltage input from the I / O buffer, and then, supplies data corresponding to the signal input to the bit line of the memory cell.

[0047] FIG. 5 is a schematic structural diagram of the memory cell array shown in FIG. 4 .

[0048] Each column of the memory cell array includes: a main bit line pull-up controller, a memory c...

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Abstract

A non-volatile ferroelectric memory device is provided to output variously reference voltages by applying a programmable register device to a reference generation unit. A non-volatile ferroelectric memory device includes a reference program unit and a reference voltage generation unit. The reference program unit controls and outputs a voltage of a reference level control signal by controlling a state of a switch. The switch is used for controlling a capacitor connected to the driving power by using a programmable register device for programming a level of an output signal according to an external signal. The reference voltage generation unit outputs a reference voltage according to a reference level control signal.

Description

technical field [0001] The present invention relates generally to ferroelectric memory devices, and more particularly to ferroelectric memory devices including a reference voltage generator that uses a programmable register to adjust the reference voltage level and that uses an external signal to program an output signal level and a redundant decoder. level, and maintain the programming result in the absence of power to control the on / off of the switch, which adjusts the capacitance of the capacitor connected to the driving power supply, and the redundant decoder uses a programmable register as the on / off of the switch Open controller for programming redundant address program. Background technique [0002] In general, Ferroelectric Random Access Memory (hereinafter referred to as 'FRAM') is attracting great attention as the memory of the next century because its processing speed is as fast as that of DRAM, even when the power is off. The data can als...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/22G11C16/02
CPCG11C11/221G11C11/2275G11C11/2297G11C29/781
Inventor 姜熙福
Owner SK HYNIX INC