LED indicating pen o f gallium nitride base
A light-emitting diode, gallium nitride-based technology, applied in the field of stylus, can solve the problems of large divergence and short transmission distance, and achieve the effects of low cost, high beam collimation and monochromaticity, and uniform brightness
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[0017] Below combined with the accompanying drawings, the central wavelength λ 0 Taking a 550nm green light-emitting diode as an example, the specific implementation of the present invention will be described in detail. The GaN-based light-emitting diode 1 of the present invention is formed by sequentially growing an n-GaN lower electrode layer 102, an In x Ga 1-x The light-emitting layer 103 of the N / GaN quantum well structure and the p-GaN upper electrode layer 104 are formed, and the light-emitting diodes of different wavelength bands can be obtained by adjusting the composition x value of In, and the x value in this embodiment is 0.2.
[0018] Then on the upper electrode layer 104, a narrow-band filter film layer 2 is generated by vacuum coating, and the structure of the filter film layer is:
[0019] α[(LH) 12 1.6L (HL) 12 ]β[(HL) 12 2.1H(LH) 12 ],
[0020] where L is low refractive index SiO 2 film layer, H is high refractive index Ta 2 o 5 film layer, the opti...
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