Integrate circuit and method for making the same

Abstract

Provided are a fuse structure and a method for manufacturing the fuse structure. In one example, the method includes providing a multilayer interconnect structure (MLI) over a semiconductor substrate. The MLI includes multiple fuse connection and bonding connection features. A passivation layer is formed over the MLI and patterned to form openings, with each opening being aligned with one of the fuse connection or bonding connection features. A conductive layer is formed on the passivation layer and in the openings. The conductive layer is patterned to form bonding features and fuse structures. Each bonding feature is in contact with one of the bonding connection features, and each fuse structure is in contact with two of the fuse connection features. A cap dielectric layer is formed over the fuse structures and patterned to expose at least one of the bonding features while leaving the fuse structures covered.

Description

technical field [0001] The invention relates to an integrated circuit and a manufacturing method thereof, in particular to a fuse structure of a programmable backup memory and a manufacturing method thereof. Background technique [0002] Laser-programmable memory spare structures have been widely used in large-scale memory devices, using spare memory space to replace damaged components, thereby increasing yield. However, in the current structure, the laser repair rate is still relatively low, partly because the process used to control the laser repair rate is too complicated. And as the size of semiconductor technology shrinks to the sub-micron level, the copper damascene process can reach the process level of multilayer interconnection. Copper has a relatively high current density tolerance, and it is difficult to volatilize it with a laser. In addition, the fusion of low-k materials into multiple dielectric layers can lead to chipping of fuses during the etch step of the...

AI Technical Summary

Problems solved by technology

In addition, the fusion of low-k materials into multiple dielectric layers may cause the fuse to chip during the etch step of the laser repair process.

[0003] It can be seen that the fuse structure of the above-mentioned existing integrated circuit and its manufacturing method obviously still have inconvenience and defects, and need to be further improved urgently.

In order to solve the problems existing in the fuse structure and its manufacturing method, relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure for general products to solve the above problems. This is obviously a problem that relevant industry players are eager to solve

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