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Silicon-based DBR laser with standard integrated circuit compatible and its process

A technology of integrated circuits and lasers, applied in the direction of lasers, laser components, semiconductor lasers, etc.

Inactive Publication Date: 2008-02-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, energy loss and electromagnetic interference on electrical interconnection lines have become bottlenecks restricting the development of silicon-based microelectronic integrated circuits

Method used

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  • Silicon-based DBR laser with standard integrated circuit compatible and its process
  • Silicon-based DBR laser with standard integrated circuit compatible and its process

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Embodiment Construction

[0035] The present invention is a silicon-based DBR laser and its technology compatible with standard integrated circuit technology. Please refer to the attached drawings for its specific structure, including:

[0036] an SOI substrate;

[0037] A PN junction LED, N + The area is made into a polyline structure, P + The area is a strip structure, N + region with the P-type epitaxial layer forming the N + P junction, N + District, P + The metal electrodes are respectively drawn out from the area;

[0038] A DBR total reflector, using a photolithography process to fabricate a Bragg grating reflector on the epitaxial layer, and introduce a λ / 4 phase shift region inside the grating;

[0039] A DBR semi-reflector, a Bragg grating reflector is fabricated on the epitaxial layer by using a photolithography process, and is used to form a resonant cavity with the DBR strong reflector to output laser light.

[0040] Separate isolation grooves are made on both sides of the silicon-b...

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Abstract

The invention is concerned with the silicon-based DBR laser and the process that is compatible the standard integrate circuit process in the semiconductor luminescent parts technology field. The invention is: uses the SOI wafer as the underlay, uses the process facture that is compatible the standard IC process, the active area uses the PN knot LED structure, sets the DBR Bragg whole reflector and the DBR half reflector in the passive area of the two sides of the active area respectively in order to form the resonant cavity.

Description

technical field [0001] The invention relates to the technical field of semiconductor light-emitting devices, in particular to a silicon-based DBR laser compatible with standard integrated circuit technology and its technology. Background technique [0002] With the rapid reduction of feature size in standard integrated circuit processes, the density and cost of devices have been greatly improved. However, energy loss and electromagnetic interference on electrical interconnection lines have become bottlenecks restricting the development of silicon-based microelectronic integrated circuits. Based on its obvious advantages in transmission bandwidth, anti-interference ability and energy consumption, optical interconnection is expected to become an effective way to solve this problem. Silicon material is the main material of microelectronic integrated circuit technology, and plays an extremely important role in VLSI. Using silicon as the basic material and using mature standard...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/00H01L21/84H01L27/15H01L33/00
Inventor 陈弘达刘海军高鹏顾明
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI