The application provides a kind of MOCVD process multi-parameter
synchronous detection method,
system, equipment and storage medium, it is related to
semiconductor detection technical field, the application is by being divided into object light and reference light to
single mode laser, and using reference light is
diffraction to form spherical
reference wave, so that object light and spherical
reference wave are coincided in the space near
semiconductor surface to form stable interference fringe;Again, the phase distribution graph and contrast distribution graph are extracted synchronously for each frame of interference image, and multi-parameter synchronous decoupling and inversion are carried out under unified
data source and space reference
system, so that in situ, real-time, full-field synchronous acquisition and
correlation analysis of
semiconductor morphology, temperature and
optical reflection characteristics can be realized under the condition of MOCVD high temperature and strong
radiation and semiconductor rotation, avoid the time and space asynchronization and information fragmentation problem caused by multiple independent monitoring systems, reduce the complexity of
system integration and calibration, while providing unified, accurate and comprehensive data basis for
process optimization.