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Method for preparing organic molecule device with cross line array structure

An array structure and molecular device technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of polluting organic materials, improving, and processing difficulty, and achieve the effect of solving compatibility problems

Inactive Publication Date: 2008-03-05
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

The current manufacturing process of the cross-wire structure is generally to first prepare the lower electrode, then grow the organic material, and finally complete the preparation of the upper electrode. In the preparation process of the upper electrode, pollution will be introduced and the organic material will be damaged, and the processing is relatively difficult. Large, and not conducive to the improvement of device performance

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  • Method for preparing organic molecule device with cross line array structure
  • Method for preparing organic molecule device with cross line array structure
  • Method for preparing organic molecule device with cross line array structure

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Embodiment Construction

[0029] A method for preparing an organic molecular device with a cross-line array structure according to the present invention. The cross-line structure prepared by two photolithography, one plasma etching and one chemical mechanical polishing, and then growing organic materials on this basis, and then using Oxygen plasma cleaning to obtain cross-line array organic molecular devices.

[0030] The steps of the present invention are as follows: 1, deposit a silicon nitride film on the surface of the substrate; 2, spin-coat resist on the surface of the silicon nitride film, and obtain electrode patterns by photolithography; 3, use the resist to mask the etching Silicon nitride film; 4. Evaporate and peel off the metal to obtain the lower electrode of the intersecting line; 5. Growth of the sacrificial layer material; 6. Chemical mechanical polishing of the sacrificial layer material to the surface of the silicon nitride film; 7. Spin-coat resist, and obtain Upper electrode patter...

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Abstract

The related preparation method for a cross-line array organic molecular device comprises: 1. depositing Si3N4 film on the substrate; 2. spin coating resists on film to photo etch and obtain electrode pattern; 3. with resist for mask, etching the film; 4. evaporating and stripping off metal to obtain cross-line lower electrode; 5. growing sacrificial material; 6. chemical-mechanical polishing last material till the Si3N4 film; 7. spin coating resist to photo etch and obtain upper electrode pattern; 8. similarly, obtaining the upper electrode; 9. releasing the sacrificial material; 10. generating organic molecular material with liquid phase; 11. etching to complete the process.

Description

technical field [0001] The invention belongs to the technical field of microfabrication in microelectronics and molecular electronics, and in particular relates to a preparation method of an organic molecular device with a cross-line array structure. Background technique [0002] As the feature size of large-scale integrated circuits enters the nanometer level, the traditional silicon-based integrated circuit technology is facing challenges, and the research on new materials and new structures has become a hot spot. Molecular electronic devices, one of the branches of nanoelectronics, are booming. FET and cross-wire are currently the main structures of molecular electronic devices, and the cross-wire structure is beneficial to integration and has attracted extensive attention. The current manufacturing process of the cross-wire structure is generally to first prepare the lower electrode, then grow the organic material, and finally complete the preparation of the upper electr...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 涂德钰王从舜刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI