Particle-removing process before semiconductor etching

A semiconductor and process technology, applied in the field of pretreatment of semiconductor etching process, can solve problems such as difficulty in ensuring particle control effect and inability to clean silicon wafers

Active Publication Date: 2008-03-26
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage is that the silicon wafer cannot be cleaned immediately before the process step, so it is difficult to ensure the control effect of particles in the process

Method used

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  • Particle-removing process before semiconductor etching

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Experimental program
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Effect test

Embodiment 1

[0023] In the polysilicon wafer etching process, the equipment used is the PM2 of the Equipment Technology Research Center of the North Microelectronics Base. The structure of the polysilicon wafer used is: 100 Ȧ of silicon dioxide, 3050 Ȧ of polysilicon, and a silicon wafer (substrate substrate).

[0024] The etching process is mainly divided into the following steps:

[0025] 1. Send the silicon wafer to the surface of the electrostatic chuck in the chamber;

[0026] 2. Apply the electrostatic chuck voltage, and fix the silicon wafer on the surface of the electrostatic chuck through electrostatic attraction;

[0027] 3. Through the process gas;

[0028] 4. The pendulum valve adjusts the pressure to the set value;

[0029] 5. Add the lower electrode to start the glow;

[0030] 6. The etching process starts. The etching process mainly includes the following steps:

[0031] 1) BT (Break through), that is, the removal of the natural oxide layer, the process parameters are: ...

Embodiment 2

[0038] According to the method described in embodiment 1, difference is, the process that silicon chip is carried out pretreatment before BT step:

[0039] (1) The chamber pressure is 8mT, the upper electrode power is 400w, and the carrier gas is N 2 60sccm, Cl 2 10 sccm, SF 6 20 sccm, O 2 10sccm, the total gas flow rate is 100sccm, and the time is 5s.

[0040] (2) The chamber pressure is 1mT, the upper electrode power is 400w, and the carrier gas is He30sccm, N 2 20sccm, the time is 10s.

[0041]After the above process, the detection standard is that the number of particles with a size of 0.2um-3um is less than 25 (200mm wafer etch). It is observed by Surfscan 6420 Unpatterned WaferInspection of KLA Company, as shown in Figure 2, it can be seen that the number of particles on the wafer is Particle distribution, the lower part of the figure is the particle size distribution range, specifically, 8 particles with a particle size of 0.2um-3um are obtained.

Embodiment 3

[0043] According to the method described in embodiment 1, difference is, the process that silicon chip is carried out pretreatment before BT step:

[0044] (1) The chamber pressure is 20mT, the upper electrode power is 200w, and the carrier gas is N 2 100sccm, SF 6 40sccm, the time is 25s.

[0045] (2) The chamber pressure is 0.1mT, the upper electrode power is 500w, and the carrier gas is He10sccm, Ar40sccm, N 2 10sccm, the time is 30s.

[0046] After the above process, the detection standard is that the number of particles with a size of 0.2um-3um is less than 25 (200mm wafer etch). Through the detection of Surfscan 6420 Unpatterned WaferInspection of KLA Company, we get the particles with a particle size of 0.2um-3um as 10 pieces.

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Abstract

This invention provides a technology for removing particles before etching a semiconductor including two steps: 1, particle excitation, 2, particle removing.

Description

technical field [0001] The invention relates to a pretreatment process of a semiconductor etching process, in particular to a process for removing particles before semiconductor etching. Background technique [0002] At present, in the semiconductor process manufacturing, the feature size of components is getting smaller and smaller, so the corresponding process requirements for semiconductors are getting higher and higher. Among them, the control of particles in the process is the key to the high yield during the control period. A key factor is the great challenge faced by semiconductor process manufacturing. [0003] In the polysilicon gate etching process, it generally includes the following three steps: (1) BT (Breakthrough), its main function is to remove the natural oxide layer on the surface; (2) ME (Main etch), that is, the main etching, Its function is to etch polysilicon to form lines; (3) OE (Over etch), that is, over etching, its function is to purge the etched ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/302H01L21/3065C23F1/10
Inventor 荣延栋
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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