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Surface-emitting type device and method for manufacturing the same

A technology for surface-emitting and light-emitting devices, applied in lasers, phonon exciters, laser parts, etc., can solve the problems of device damage and low withstand voltage, improve reliability, improve electrostatic damage withstand voltage, and prevent electrostatic damage Effect

Inactive Publication Date: 2008-04-23
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in the mounting step, the device may be damaged due to static electricity from the machine or the operator
In particular, surface-emitting devices such as surface-emitting semiconductor lasers have a certain degree of withstand voltage with respect to forward bias voltage, but the withstand voltage with respect to reverse bias voltage is low, so there may be damage due to external reverse bias voltage. Circumstances that cause damage to the device
Usually, in the installation step, various measures are taken to remove static electricity, however, these measures have certain limitations

Method used

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  • Surface-emitting type device and method for manufacturing the same
  • Surface-emitting type device and method for manufacturing the same
  • Surface-emitting type device and method for manufacturing the same

Examples

Experimental program
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Effect test

no. 1 example

[0053] 1-1. Surface-emitting device

[0054] figure 1 is a plan view of the surface emitting device according to the first embodiment of the present invention. figure 2 yes figure 1 The cross-sectional view of the line II-II. image 3 It is a circuit diagram of the surface emission type device according to this embodiment.

[0055] The surface emission type device 1 includes: a substrate 10 , a light emitting device portion 20 , and a rectifying device portion 40 . In this embodiment, description will be made by taking the surface-emitting device as an example of a surface-emitting semiconductor laser.

[0056] Substrate 10 is a semiconductor substrate (for example, an n-type GaAs substrate). The substrate 10 supports the light emitting device part 20 and the rectifying device part 40 . In other words, the light emitting device portion 20 and the rectifying device portion 40 are formed on the same substrate (same chip), forming a monolithic circuit structure.

[0057] ...

no. 2 example

[0100] 2-1. Surface-emitting device

[0101] Figure 9 is a cross-sectional view of a surface-emitting device according to a second embodiment of the present invention. In this embodiment, the surface emitting device 100 includes a substrate 10, a light emitting device part 20, and a rectifying device part 140, and the structure of the rectifying device part 140 is different from that of the first embodiment. The contents of the substrate 10 and the light emitting device portion 20 are the same as those described in the first embodiment.

[0102] The rectifier unit 140 according to the present embodiment includes a Schottky diode 160 . Specifically, the rectifier device part 140 includes the following parts arranged from the side of the substrate 10: the first support part 42 composed of the same composition as the first semiconductor part 22, the first support part 42 composed of the same composition as the second semiconductor part 24 Two supporting parts 44 , fourth semi...

no. 3 example

[0127] Figure 15 It is a schematic diagram of the optical transmission device according to the third embodiment to which the present invention is applied. The optical transmission device 200 may be a computer, a display, a storage device, a printer and other electronic devices 202 connected to each other. The electronic device 202 may also be an information communication device. The optical transmission device 200 may be a device provided with plugs 206 at both ends of a cable 204 . Cable 204 includes optical fibers. The plug 206 incorporates optical devices (including the above-mentioned surface emission type devices). The plug 206 may also have a built-in semiconductor chip.

[0128] The optical device connected to one end of the optical fiber is a light emitting device (the above-mentioned surface emitting device), and the optical device connected to the other end of the optical fiber is a light receiving device. The electrical signal output from the electronic device...

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PUM

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Abstract

The invention prevents electrostatic breakdown and improve reliability concerning surface-emitting type devices and methods for manufacturing the same. A surface-emitting type device includes a substrate (10), a light emitting element section (20) above the substrate (10), including a first semiconductor section (22) of a first conductivity type, a second semiconductor section (24) that functions as an active layer, and a third semiconductor section (26), (28) of a second conductivity type which are disposed from the side of the substrate (10), a rectification element section (40) above the substrate (10), including a first supporting section (42) composed of an identical composition of the first semiconductor section (22), a second supporting section (44) composed of an identical composition of the second semiconductor section (24), a fourth semiconductor section (46, 48), and a fifth semiconductor section (50), which are disposed from the side of the substrate (10), and first and second electrodes (30), (32) for driving the light emitting element section (20). The fourth and fifth semiconductor sections (46, 48, 50) are connected in parallel between the first and second electrodes (30, 32), and have a rectification action in a reverse direction with respect to the light emitting element section (20).

Description

technical field [0001] The present invention relates to a surface emitting device and a manufacturing method thereof Background technique [0002] Because the surface-emitting semiconductor laser has a smaller device volume than the end-emitting semiconductor laser in the prior art, the electrostatic breakdown withstand voltage of the device itself is also lower. Therefore, in the mounting step, the device may be damaged by static electricity from a machine or an operator. In particular, surface-emitting devices such as surface-emitting semiconductor lasers have a certain degree of withstand voltage with respect to forward bias voltage, but the withstand voltage with respect to reverse bias voltage is low, so there may be damage due to external reverse bias voltage. Conditions that cause damage to the device. Generally, in the installation step, various measures are taken for removing static electricity, however, these measures have certain limitations. [0003] Patent Do...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/18H01S5/00
Inventor 西田哲朗大西一
Owner SEIKO EPSON CORP