Method for producing high-voltage assembly capable of improving assembly characteristic
A technology of high-voltage components and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as reduced current drive capability, increase drive current, improve collapse and decrease current drive capability, and increase breakdown voltage Effect
Inactive Publication Date: 2008-05-14
GRACE SEMICON MFG CORP
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[0006] Another object of the present invention is to provide a method of manufacturing high-voltage components that can improve the characteristics of the components. It utilizes the low concentration of the drift region and the gradient distribution of the concentration of the region where the drift region is located in the channel and close to the drain to improve the existing Disadvantages of premature breakdown of technology and reduced current drive capability
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[0018] In order to make the above-mentioned purpose, technical content, and features of the present invention more comprehensible, a preferred embodiment will be described in detail below together with the accompanying drawings.
[0019] In the present invention, a doping with a lighter concentration is formed in the drift region under the field oxide layer, and the concentration of the channel near the field oxide layer is distributed in a gradient, so that the concentration in the region next to the drain is the highest, and then the concentration is distributed in a gradient. The concentration in the region close to the semiconductor substrate is the lowest, and the concentration in this region is equivalent to that of the drift region, so that the improved structure of the drift region can be used to simultaneously increase the breakdown voltage and the driving current.
[0020] Please refer to Figure 2(a) to Figure 2(f), Figure 2(a) to Figure 2(f) is a cross-sectional view...
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The production method of high-voltage component capable of improving component characteristics includes the following steps: on a semiconductor substrate on which a drift region is formed forming a thin oxide layer, a silicon nitride layer and a patterned light-blocking layer and using said patterned light-blocking layer as mask, etching silicon nitride layer, then removing the patterned light-blocking layer, then forming a phosphorous glass layer on the semiconductor substrate, and high-temp. introducing phosphorus ion into the lower portion of its substrate so as to form a phosphorus ions doped region, after the phosphorus ions doped region is formed, removing phosphorus glass layer, silicon nitride layer and thin oxide layer, then successively forming field oxide layer, grid structure and components of source and dipole, etc. on the semiconductor substrate.
Description
technical field [0001] The invention relates to a manufacturing method of a semiconductor component, in particular to a manufacturing method of a high voltage component (High Voltage Device) which can improve the characteristics of the component and enhance the efficiency of the component. Background technique [0002] High-voltage components are the parts that need to be operated at high voltage in the application of electronic production. Usually, in the structure of general integrated circuits, some products have more control components in the input / output (I / O) area than in the core component area. The voltage required by the control components is higher, and this input / output area must have components that can withstand higher voltages, so as to prevent the normal operation of components under high voltage without voltage collapse (Breakdown); so the structure of high-voltage components Not the same as general components. [0003] When a known semiconductor component h...
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Inventor 高荣正
Owner GRACE SEMICON MFG CORP