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Method for producing integrated circuit sample section using laser

An integrated circuit and sample technology, applied in the field of analysis and detection, can solve the problems of sample contamination, long production time, high equipment cost and operation cost

Inactive Publication Date: 2008-05-21
SHANGHAI HUA HONG GROUP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires special equipment and high vacuum conditions, and the equipment cost and operating cost are very high
Moreover, because the ion beam spot is small, the preparation time of the sample is very long. Generally, it takes several hours to prepare a sample.
In addition sputtered atoms may deposit in undesired locations, possibly leading to contamination of the sample

Method used

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  • Method for producing integrated circuit sample section using laser
  • Method for producing integrated circuit sample section using laser
  • Method for producing integrated circuit sample section using laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The following example illustrates a possible implementation process of the present invention, the purpose of which is to better explain the application of the present invention, but should not be construed as a limitation of the present invention.

[0022] 1. Adjust the high-energy laser and focusing system to make the output spot meet the use requirements;

[0023] 2. Clamp the sample on the sample holder of the silicon wafer stage, and move the position to be cut under the laser beam;

[0024] 3. Increase the laser output energy to heat a small area on the silicon wafer. At the same time, the sample clamping system will add force. You can choose a solid-state laser such as a ruby ​​laser. The laser pulse energy can be adjusted around 100J, the laser pulse frequency can be adjusted around 1KHz, and the laser power Adjustable around 1KW;

[0025] 4. After the sample breaks, stop the laser output, take out the sample for cross-sectional electron microscope observation.

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Abstract

This invention provides a method for processing IC sample sections utilizing laser. A high energy focused laser beam is project onto a silicon plate to heat the micro-region quickly for altering its mechanical performance and to match with the mechanical force applied onto the sample at the same time to generated cracks on the sample accurately to be cracked in terms of the predetermined direction so as to get required sections swiftly and accurately.

Description

technical field [0001] The invention belongs to the technical field of analysis and detection in the manufacturing process of integrated circuits, and in particular relates to a method for making cross-sections of integrated circuit samples by using lasers. Background technique [0002] With the continuous development of integrated circuits, the minimum line width of transistors continues to shrink, and the length of transistor gates in advanced CMOS processes is close to 0.1 microns. The continuous reduction of characteristic line width has led to a substantial increase in chip integration, but the fine lines have brought great difficulties to process analysis. [0003] Cross-sectional analysis is an important analytical method for developing and monitoring the production process of integrated circuits. It cuts off the silicon wafer along the thickness direction of the silicon wafer in the area to be analyzed, and then takes the cross-sectional sample to enlarge and observe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/00
Inventor 姚峰英
Owner SHANGHAI HUA HONG GROUP