Chip washing process and method for forming opening therefor

A wafer cleaning and wafer technology, applied in cleaning methods and utensils, cleaning methods using liquids, chemical instruments and methods, etc., can solve problems such as incomplete cleaning, impact on the quality of metal internal connections, and lower yields. Difficult cleaning and stable wafer cleaning results

Active Publication Date: 2008-07-02
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for the damascene opening process using a metal hard mask layer, the polymer on the sidewall of the damascene opening on the substrate (wafer) is often not completely cleaned, which greatly affects the quality of the metal interconnection. , so that the yield of the product is greatly reduced

Method used

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  • Chip washing process and method for forming opening therefor
  • Chip washing process and method for forming opening therefor
  • Chip washing process and method for forming opening therefor

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Embodiment Construction

[0042] The preferred embodiment takes the polymer removal step after the etching step of the dual damascene opening as an example, which is not intended to limit the scope of the present invention.

[0043] Figure 1A to Figure 1C Shows a schematic cross-sectional view of a double metal damascene opening process. First, please refer to Figure 1A , A substrate 100 is provided, and the substrate 100 has a plurality of elements (not shown). A dielectric layer 110 is formed on the substrate 100. The material of the dielectric layer 110 is, for example, silicon oxide or silicon-based low-dielectric constant materials, such as hydrogen silsesquioxane (HSQ), Methyl-containing silicate (methylsesquioxane, MSQ) and so on. Then, a hard mask layer 120 is formed on the dielectric layer 110, the material of which is, for example, silicon nitride or metal. When the hard mask layer 120 is a metal hard mask layer, and its material is a metal such as titanium nitride (TiN), intermediate layers 1...

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Abstract

The technique for cleaning out wafers is suitable to be carried out after an etching procedure is executed for a wafer. The wafer possesses center of circle, radius and edge of a wafer. The method includes operations: a nozzle transfers cleaning solution above the wafer; the nozzle moves along a moving path by using wafer center of circle as center; back and forth movement is carried out above neighborhood of center of wafer.

Description

Technical field [0001] The invention relates to a semiconductor process, in particular to a method for removing residual polymer from a wafer. Background technique [0002] In the semiconductor process, the patterning process of a material layer usually includes a photolithography step of forming a patterned photoresist, and then an etching step using the patterned photoresist as a mask. Since the photoresist is an organic substance, after the etching step is completed, some etching residues composed of polymers often remain on the substrate, which will cause many problems. For example, in the damascene opening process, that is, the polymer with etching residue is often formed on the sidewall of the opening, which affects the subsequent process. For example, in the semiconductor process, if the polymer is not removed by a proper method, it It will affect the subsequent metal filling process and therefore reduce the quality of the metal interconnection. [0003] In order to solve ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/3105B08B3/00
Inventor 陈博仁
Owner UNITED MICROELECTRONICS CORP
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