Chip washing process and method for forming opening therefor

Abstract

The technique for cleaning out wafers is suitable to be carried out after an etching procedure is executed for a wafer. The wafer possesses center of circle, radius and edge of a wafer. The method includes operations: a nozzle transfers cleaning solution above the wafer; the nozzle moves along a moving path by using wafer center of circle as center; back and forth movement is carried out above neighborhood of center of wafer.

Description

Technical field [0001] The invention relates to a semiconductor process, in particular to a method for removing residual polymer from a wafer. Background technique [0002] In the semiconductor process, the patterning process of a material layer usually includes a photolithography step of forming a patterned photoresist, and then an etching step using the patterned photoresist as a mask. Since the photoresist is an organic substance, after the etching step is completed, some etching residues composed of polymers often remain on the substrate, which will cause many problems. For example, in the damascene opening process, that is, the polymer with etching residue is often formed on the sidewall of the opening, which affects the subsequent process. For example, in the semiconductor process, if the polymer is not removed by a proper method, it It will affect the subsequent metal filling process and therefore reduce the quality of the metal interconnection. [0003] In order to solve ...

AI Technical Summary

Problems solved by technology

However, for the damascene opening process using a metal hard mask layer, the polymer on the sidewall of the damascene opening on the substrate (wafer) is often not completely cleaned, which greatly affects the quality of the metal interconnection. , so that the yield of the product is greatly reduced

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