Chip washing process and method for forming opening therefor
A wafer cleaning and wafer technology, applied in cleaning methods and utensils, cleaning methods using liquids, chemical instruments and methods, etc., can solve the problems of incomplete cleaning, influence of metal interconnection quality, and reduced yield, etc. Easy to clean and stable wafer cleaning results
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[0044] The preferred embodiment takes the polymer removal step after the etching step of the dual damascene opening as an example, which is not intended to limit the scope of the present invention.
[0045] 1A to 1C are schematic cross-sectional views of a dual damascene opening process. First, please refer to FIG. 1A , a substrate 100 is provided, and the substrate 100 has a plurality of elements (not shown). A dielectric layer 110 is formed on the substrate 100. The material of the dielectric layer 110 is, for example, silicon oxide or silicon-based (silicon-based) low dielectric constant material, such as hydrogen-containing silicate (hydrogen silsesquioxane, HSQ), Methyl silicates (methylsesquioxane, MSQ) and so on. Next, a hard mask layer 120 is formed on the dielectric layer 110, and its material is, for example, silicon nitride or metal. When the hard mask layer 120 is a metal hard mask layer, and its material is titanium nitride (TiN) and other metals, intermediate l...
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