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Process for depositing film, process for fabricating semiconductor device, semiconductor device and device for depositing film

A film-forming method and film-forming technology, applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve the problems of rough surface and corrosion of Cu wiring, and achieve good orientation, good coverage and less impurities Effect

Inactive Publication Date: 2008-07-23
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, since the above-mentioned first source gas uses TiCl as a halogen compound gas 4 , so there is a problem that the underlying Cu wiring is corroded by the halogen, and the surface of the Cu wiring becomes rough.

Method used

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  • Process for depositing film, process for fabricating semiconductor device, semiconductor device and device for depositing film
  • Process for depositing film, process for fabricating semiconductor device, semiconductor device and device for depositing film
  • Process for depositing film, process for fabricating semiconductor device, semiconductor device and device for depositing film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] Figure 1A ~ Figure 1C It is a figure which shows the film-forming method of Example 1 of this invention in order. In this embodiment, formation of a TiN film as a Cu diffusion preventing film will be described in order. In addition, in this embodiment, when the underlying film is an insulating film when the TiN film is formed, a method of forming a high-quality Cu diffusion preventing film as described above without damaging the insulating film will be described below. .

[0062] First, refer to Figure 1A , on the base film 1 formed on the substrate to be processed, a first diffusion prevention film 2 is formed. In this case, in the method of alternately supplying the above-mentioned first source gas and second source gas to the substrate to be processed, the first source gas uses TiCl 4 , the second raw material gas uses NH 3 .

[0063] Next, at Figure 1B In the above-mentioned first diffusion prevention film 2, the second Cu diffusion prevention film 3 is for...

Embodiment 2

[0080] Next, as Example 2, a method of forming a high-quality Cu diffusion preventing film as described above without damaging the Cu film when the base film is a Cu film will be described below.

[0081] Figure 2A ~ Figure 2C The film-forming method of Example 1 of the present invention is shown in order. In this example, the procedure for forming a TiN / Ti(C)N film as a Cu diffusion preventing film will be described.

[0082] First, refer to Figure 2A , on the Cu film 5 formed on the substrate to be processed, a first Cu diffusion preventing film 6 is formed. In this case, in the method of alternately supplying the above-mentioned first source gas and second source gas to the substrate to be processed, TEMAT(Ti[N(C 2 h 5 CH 3 )] 4 ), using NH for the second feed gas 3 , the first Cu diffusion preventing film 6 composed of a Ti(C)N film is formed.

[0083] Next, at Figure 2B In the above-mentioned first diffusion prevention film 6, the second Cu diffusion preventio...

Embodiment 3

[0096] Here, as Example 3, it will be described below that both the insulating film and the Cu film exist on the base film when the Cu diffusion preventing film is formed, and neither the insulating film nor the Cu film is damaged, and the formation of the above-mentioned A method of high-quality Cu diffusion prevention film. Figure 3A ~ Figure 3C It is a figure which shows the film-forming method of Example 3 of this invention in order. In this example, the procedure for forming a TiN / Ti(C)N film as a Cu diffusion preventing film will be described.

[0097] First, refer to Figure 3A A first diffusion preventing film 8 is formed on the insulating film 1 and the Cu film 5 formed on the substrate to be processed. In this case, in the method of alternately supplying the first source gas and the second source gas as described above to the substrate to be processed, TEMAT is used for the first source gas, and NH is used for the second source gas. 3 , the first Cu diffusion pre...

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Abstract

A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.

Description

technical field [0001] The present invention relates to a film-forming method for forming a film on a semiconductor substrate, and more specifically, to a method for manufacturing a semiconductor device, a semiconductor device, and a film-forming device. Background technique [0002] In recent years, with the high performance of semiconductor devices and the development of high integration of semiconductor devices, the demand for miniaturization has become significant, and the wiring specification has been developed from 0.13 μm to a region below 0.10 μm. In addition, the wiring material was replaced with Cu, which has little influence on wiring delay and has a low resistance value, from the existing Al. [0003] For this reason, the combination of Cu film-forming technology and fine wiring technology is important for the manufacturing technology of high-performance semiconductor devices in recent years. [0004] When using Cu wiring as described above, it is necessary to f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/285H01L21/768H01L21/3205C23C16/455
Inventor 石坂忠大大岛康弘吉井直树重冈隆川村刚平福田幸夫小岛康彦
Owner TOKYO ELECTRON LTD