Polysilicon-insulating layer-polysilicon capacitance, high-capacitant polysilicon device and its production
A technology of high-resistance polysilicon and polysilicon capacitors, which is applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of negative impact on yield rate, cumbersome production methods, and many process steps, so as to improve yield rate and save energy. Production cost, the effect of simplifying the device structure
Active Publication Date: 2008-08-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
The conventional manufacturing methods of these two components are relatively cumbersome. Three layers of polysilicon are used as the upper and lower plates of the PIP capacitor and high-resistance polysilicon respectively. At the same time, four photolithography and three ion implantation are required to engrave the PIP capacitor and HRPoly. etching and doping
Due to the complex structure and many process steps, not only the process cost is too high, but also the improvement of the yield is negatively affected
Method used
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[0016] like figure 1 As shown, in polysilicon-insulator-polysilicon capacitors and high-resistance polysilicon devices, the polysilicon gate of the transistor, the lower plate of the PIP capacitor, and the high-resistance polysilicon are all completed on the first layer of polysilicon, and only the upper plate of the PIP capacitor is a separate The second layer of polysilicon. Therefore, the entire structure has only two layers of polysilicon, which reduces one layer compared with the conventional structure, and saves one photolithography.
[0017] The manufacture method of polysilicon-insulating layer-polysilicon capacitor and high-resistance polysilicon device of the present invention is as Figure 2 to Figure 10 shown. It includes the following steps:
[0018] 1. First, deposit polysilicon after the gate oxide layer, and perform photolithography and etching of polysilicon to form the gate of the transistor, the lower plate of the PIP capacitor and the high-resistance pol...
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The method comprises the following steps: a polysilicon gate, a lower electrode plate of PIP capacitor and a high resistance polysilicon are formed on a first polysilicon layer; an upper electrode plate of PIP capacitor is independently formed on a second polysilicon layer. The invention uses p-type ion implantation of PMOS source / drain region and n-type ion implantation of PIP lower electrode plate to get a required resistance value so as to save one time of ion implantation and one time of photoetch.
Description
technical field [0001] The invention relates to a method for making a polysilicon-insulating layer-polysilicon capacitor and a high-resistance polysilicon device for analog or radio frequency integrated circuits. Background technique [0002] At present, polysilicon-insulator-polysilicon (PIP) capacitors and high resistance polysilicon (HRPoly) are components that are often used simultaneously in analog or radio frequency integrated circuits. The conventional production methods of these two components are relatively cumbersome. Three layers of polysilicon are used as the upper and lower plates of the PIP capacitor and the high-resistance polysilicon respectively. At the same time, four photolithography and three ion implantation are required for the engraving of the PIP capacitor and HRPoly. etching and doping. Because the structure is complex and there are many process steps, not only the process cost is too high, but also the improvement of the yield is negatively affecte...
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IPC IPC(8): H01L29/00H01L29/92H01L29/78H01L21/02H01L21/336H01L21/8234H01L21/265
Inventor 钱文生
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP