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Non-volatility memory and its operation method

A non-volatile, memory technology, used in static memory, read-only memory, information storage, etc., can solve the problems of increasing manufacturing cost, reducing the size of silicon nitride read-only memory components, and difficult to erase electric charge. Improve integration, good convergence characteristics, small programming current

Inactive Publication Date: 2008-09-10
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the storage cells used to store charges in the conventional technology are usually manufactured in a flat form, which will limit the scaling down of silicon nitride read-only memory devices under the trend of gradually increasing device integration.
In addition, when the flat memory cell is erased, the charges accumulated near the center of the channel are not easily erased
[0006] In addition, conventional non-volatile memory elements will be doped in the substrate to form the source region and the drain region. In addition to an additional doping process in the process, it also increases the manufacturing cost

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  • Non-volatility memory and its operation method
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  • Non-volatility memory and its operation method

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Embodiment Construction

[0062] FIG. 1 is a cross-sectional view of a non-volatile memory according to an embodiment of the present invention. Referring to FIG. 1 , the non-volatile memory proposed by the present invention is composed of a plurality of memory cells 116 , and each memory cell has a gate structure 106 , a storage unit 110 and two auxiliary gates 114 . Wherein, the gate structure 106 is disposed on the semiconductor substrate 100 , for example, is composed of the gate dielectric layer 102 and the gate 104 . The material of the gate dielectric layer 102 is, for example, silicon oxide, and the method of forming it is, for example, thermal oxidation. The material of the gate 104 is, for example, doped polysilicon, and the method of forming it is, for example, in-situ doping. A doped polysilicon layer (not shown) is formed by chemical vapor deposition, and then a patterning process is performed on the doped polysilicon layer.

[0063] In addition, the storage unit 110 is disposed on the sid...

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Abstract

A nonvolatile memory body is prepared as setting gate electrode on substrate and storage unit two side walls of gate electrode, setting auxiliary gate electrode at two sides of gate electrode in adjacent to storage unit on side wall of gate electrode. It features that the first auxiliary gate electrode is share-used by two adjacent memory cells, gate electrode and storage unit as well as auxiliary gate electrode are electric -isolated.

Description

technical field [0001] The present invention relates to a memory and its operating method, and in particular to a non-volatile memory and its operating method. Background technique [0002] The electrically erasable programmable read-only memory (Electrically Erasable Programmable Read Only Memory, EEPROM) in the non-volatile memory has the functions of storing, reading, and erasing data multiple times, and the stored data is It has the advantage that it will not disappear later, so it has become a memory component widely used in personal computers and electronic equipment. [0003] A typical electrically erasable and programmable read-only memory uses doped polysilicon to make a floating gate (Floating Gate) and a control gate (Control Gate). When the memory is programmed, the electrons injected into the floating gate are uniformly distributed throughout the polysilicon floating gate layer. However, when the tunnel oxide layer under the polysilicon floating gate layer has...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L27/105H01L21/8247G11C16/02H10B69/00
Inventor 许正兴连浩明
Owner MACRONIX INT CO LTD