Unlock instant, AI-driven research and patent intelligence for your innovation.

Apparatus and method for depositing and planarizing thin films of semiconductor wafers

A kind of equipment and imported technology, which is applied in the direction of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of increasing the manufacturing cost of semiconductor wafers and reducing the yield of qualified wafers, and achieve the effects of reducing redeposition, improving cleaning, and efficient cleaning

Inactive Publication Date: 2008-11-05
LAM RES CORP
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As is often the case today, such deposits reduce the yield of good wafers and increase the cost of manufacturing semiconductor wafers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method for depositing and planarizing thin films of semiconductor wafers
  • Apparatus and method for depositing and planarizing thin films of semiconductor wafers
  • Apparatus and method for depositing and planarizing thin films of semiconductor wafers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0088] Methods and apparatus for cleaning and / or drying wafers of the present invention are disclosed. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be understood, however, to one of ordinary skill in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to obscure the present invention.

[0089] Although the present invention has been described in terms of several preferred embodiments, it should be understood that various substitutions, additions, changes and equivalents of the present invention will be realized by those skilled in the art upon reading the foregoing description and studying the accompanying drawings. The invention is therefore to embrace all such substitutions, additions, permutations and equivalents which fall with...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface of the substrate to process the surface of the substrate.

Description

technical field [0001] The present invention relates to cleaning and drying of semiconductor wafers, and more particularly, to apparatus and techniques for more efficiently removing fluids from wafer surfaces while reducing contamination and wafer cleaning costs. Background technique [0002] In the semiconductor chip fabrication process, it is well known that there is a need to clean and dry wafers that have undergone fabrication operations that leave undesirable residues on the wafer surface. Examples of such fabrication operations include plasma etching (eg, tungsten etch back (WEB)) and chemical mechanical polishing (CMP). In CMP, a wafer is placed in a holder, which pushes the surface of the wafer against a rolling conveyor belt. The conveyor belt is polished using a slurry containing chemicals and abrasive materials. Unfortunately, this process tends to leave slurry particles and residue on the wafer surface. If left on the wafer, undesired residual material and par...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00
CPCH01L21/67028H01L21/67034H01L21/67051H01L21/304
Inventor 约翰·M·德拉芮奥詹姆士·P·加西亚卡尔·武德麦克·拉夫金弗利茨·雷德克约翰·博伊德阿夫辛·尼克宏
Owner LAM RES CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More