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Metal conducting wire and producing method thereof

A technology of metal wires and manufacturing methods, applied in semiconductor/solid-state device manufacturing, nonlinear optics, semiconductor devices, etc., can solve problems such as too steep slope of metal wires

Inactive Publication Date: 2008-11-26
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] Another object of the present invention is to reduce the occurrence of poor adhesion or holes during the subsequent insulating layer deposition by improving the problem of too steep slope at the edge of the metal wire, and to produce better electrical effects

Method used

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  • Metal conducting wire and producing method thereof
  • Metal conducting wire and producing method thereof
  • Metal conducting wire and producing method thereof

Examples

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Effect test

no. 1 example

[0039] Please refer to Figure 2A to Figure 2H , which is a schematic diagram of the manufacturing method of the first embodiment of the metal wire of the present invention. Please refer to Figure 2A Firstly, a substrate 20 is provided, and a seed layer 21 is formed on the upper surface of the substrate 20 . Wherein, the substrate 20 includes a glass substrate, and the material of the seed layer 21 can be copper (Cu), tantalum (Ta), titanium (Ti), chromium (Cr) or aluminum (Al) and other conductive metals for subsequent Electrodes in the electroplating process.

[0040] Please refer to Figure 2B After the seed crystal layer 21 is formed, a first film layer 22 is sequentially formed on the seed crystal layer 21 , and a second film layer 23 is formed on the first film layer 22 . Next, a mask is used to define the position of a wire opening 24 on the first film layer 22 and the second film layer 23, and then a dry etching process is performed on the above two film layers to...

no. 2 example

[0053] Please refer to Figure 3A to Figure 3J , which is a schematic diagram of the manufacturing method of the second embodiment of the metal wire of the present invention. Please refer to Figure 3A First, a substrate 30 is provided, and a first film layer 31 is sequentially formed on the substrate 30 , and a second film layer 32 is formed on the first film layer 31 . Wherein, the substrate 30 includes a glass substrate.

[0054] Next, a mask is used to define the position of a wire opening 33 on the first film layer 31 and the second film layer 32, and then a dry etching process is performed on the above two film layers to form a wire opening 33 on the first film layer 31 and the second film layer 32 . And part of the upper surface of the substrate 30 is exposed through the wire opening 33, such as Figure 3B shown.

[0055] Please refer to Figure 3C After the wire opening 33 is formed, the opening sidewall of the first film layer 31 is etched so that the sidewall r...

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Abstract

This invention discloses a metal lead and its manufacturing method including the following steps: forming a first film on a base plate, a second film on the first film, forming a lead opening on the first and second films and exposing part of the top surface of the base plate, etching the opening side wall of the first film inward to let it shrink inward to form a side-directed notch between the second film and the base plate, forming a seed crystal layer on the top surfaces of the base plate exposed by the opening and the second film, carrying out plating to form a metal material on the surface of the seed crystal layer to be filled in the lead opening and the side-directed notch to form a metal layer, removing the second film and stripping the seed crystal layer and the metal material overlapped on the second film.

Description

technical field [0001] The present invention relates to a metal wire and a manufacturing method thereof, in particular to a metal wire used in a liquid crystal display panel manufacturing process and a manufacturing method thereof. Background technique [0002] With the advancement of display technology, compared with traditional CRT displays, thin film transistor liquid crystal displays (TFT-LCDs) have the advantages of lightness, thinness, low radiation, and small volume without occupying space. Therefore, thin film transistor liquid crystal display has become the main product in the display market. In response to the rapid development of liquid crystal display products, the industrial competition among liquid crystal panel manufacturers is increasing day by day. [0003] In the manufacturing process of the liquid crystal display panel, the gate wire belongs to the first patterned metal layer on the substrate, so the structural characteristics of the gate wire have a great...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/336H01L21/768H01L29/423H01L29/786H01L23/522G02F1/1333
Inventor 李豪捷朱庆云
Owner AU OPTRONICS CORP
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