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Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing

A chemical-mechanical, control-method technology, applied in surface polishing machine tools, grinding/polishing equipment, polishing compositions containing abrasives, etc., can solve the problem of high surface roughness, achieve high concentration, good dispersion, low The effect of roughness

Inactive Publication Date: 2009-02-18
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the above disadvantages, in order to solve the problem of high surface roughness existing in the chemical mechanical polishing process of the existing copper wiring, and provide a kind of strong chemical action, low roughness, no scratches, and low cost Control Method of Roughness in Chemical Mechanical Polishing of ULSI Multilayer Copper Wiring

Method used

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  • Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing
  • Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing
  • Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing

Examples

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Effect test

Embodiment 1

[0031] The preparation method of polishing liquid for reducing the surface roughness of ULSI multilayer copper wiring: choose nano-grade silica sol (15-20nm) as abrasive, the concentration is 40%, 30L is selected, and the ratio of deionized water is 1:1. While stirring, add the abrasive to the deionized water, add an appropriate amount of hydroxyethyl ethylene diamine to adjust the pH to 10, and then add 800ml of FA / O surfactant, 0π-7(C 10 H 21 -C 6 H 4 -O-(CH 2 CH 2 O) 7 -H), 0 π -10(C 10 H 21 -C 6 H 4 -O-(CH 2 CH 2 O) 10 -H), 0-20(C 12-18 H 25-37 -C 6 H 4 -O-CH 2 CH 2 O) 70 -H), JFC, fatty alcohol polyoxyethylene ether, polyoxyethylene alkyl amine, alkyl alcohol amide is added to the polishing liquid while stirring; the polishing conditions are: the external pressure is zero, the flow rate is 4L / min, rotating speed 60rpm / min, temperature 25℃, polishing time 4min. Figure 1-Figure 6 The surface topography of copper or tantalum during AFM detection before and after polishing are r...

Embodiment 2

[0033]The preparation method of polishing liquid for reducing the surface roughness of ULSI multilayer copper wiring: choose nano-scale silica sol (15-20nm) as abrasive, the concentration is 45%, 35L is selected, and the ratio of deionized water is 1:2. Add the abrasive to the deionized water while stirring, add an appropriate amount of dihydroxyethylethylenediamine to adjust the pH to 11, and then add 2000ml FA / OI type active agent to the polishing liquid while stirring; the polishing conditions are: the external pressure is zero , Flow rate 3L / min, speed 30rpm / min, temperature 20℃, polishing time 5min. Others are the same as in Example 1.

Embodiment 3

[0035] The preparation method of polishing liquid for reducing the surface roughness of ULSI multilayer copper wiring: choose nano-grade silica sol (15-20nm) as abrasive, concentration is 50%, choose 40L, and the ratio of deionized water is 1:3. Add the abrasive to the deionized water while stirring, add an appropriate amount of triethanolamine to adjust the pH to 12, and then add 2500ml FA / OI active agent to the polishing solution while stirring; the polishing conditions are: the external pressure is zero, and the flow rate is 5L / min , Rotating speed 120rpm / min, temperature 25℃, polishing time 3min. Others are the same as in Example 1.

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Abstract

The invention relates to a method for controlling mechanically polished surface roughness of ULSI multilayer copper wire. It is characterized in that: it uses SiO2 hydrosol at small diameter as abrasive; uses organic alkali as the pH adjuster and complex builder; adds non-ionic surface activator to prepare the polish liquid; the preparation comprises following steps that first, preparing the polish liquid that a, diluting the SiO2 abrasive whose diameter is 15-20nm with the 1-5 times of deionized water; b, using pH adjuster organic alkali to adjust said solution, to make the pH value between 10-12; c, mixing and adding 0.5-10% (volume percentage) aether mellow activator to prepare the polish liquid; then, polishing form 3-5mins, while the flux is 3-5L / min, the temperature is 15-25Deg. C, the rotation speed is 30-120rpm, and the external pressure is zero that there is only the weight of carrier; the invention can effectively reduce the roughness of copper, baffle material and tantalum surface, via the strong complex function and accelerating the surface quantity transmission at alkali condition, with simple process and significant effect.

Description

Technical field [0001] The invention relates to a chemical mechanical polishing technology, in particular to a method for controlling roughness in the chemical mechanical polishing of ULSI multilayer copper wiring. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the production level of integrated circuits has entered the 65nm era. As the feature size of device design has evolved to nanometers, the impact of RC delay on device performance has become greater and greater, and it must reach high frequencies. For metal interconnection structures, the RC delay must be reduced, which requires the structure to be multi-layered and three-dimensional. As the metal of the interconnection structure, aluminum has been widely used in VLSI design, but in ULSI design, the metal connection becomes thinner. The increase in resistivity results in increased heat generation, resulting in severe electromigration, which greatly affects the perfor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B29/02C09G1/02C09G1/04
Inventor 刘玉岭刘博
Owner HEBEI UNIV OF TECH
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