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Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing

A chemical-mechanical and control method technology, applied in surface polishing machine tools, grinding/polishing equipment, polishing compositions containing abrasives, etc., can solve the problem of high surface roughness, achieve high concentration, improve and reduce roughness, good stability

Inactive Publication Date: 2006-11-22
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the above disadvantages, in order to solve the problem of high surface roughness existing in the chemical mechanical polishing process of the existing copper wiring, and provide a kind of strong chemical action, low roughness, no scratches, and low cost Control Method of Roughness in Chemical Mechanical Polishing of ULSI Multilayer Copper Wiring

Method used

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  • Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing
  • Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing
  • Method for controlling roughness in ULSI multi-layer copper metallization chemico-mechanical polishing

Examples

Experimental program
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Effect test

Embodiment 1

[0030] The preparation method of the polishing liquid that is used to reduce the surface roughness of ULSI multilayer copper wiring: select nano-scale silica sol (15-20nm) to make abrasive material for use, concentration is 40%, choose 30L, wherein and deionized water ratio is 1: 1, Add abrasives to deionized water while stirring, add an appropriate amount of hydroxyethylethylenediamine to adjust the pH value to 10, then add 800ml FA / O surfactant, O II -7((C 10 h 21 -C 6 h 4 -O-CH 2 CH 2 O) 7 -H), O II -10((C 10 h 21 -C 6 h 4 -O-CH 2 CH 2 O) 10 -H), O-20(C 12-18 h 25-37 -C 6 h 4 -O-CH 2 CH 2 O) 70 -H), JFC, fatty alcohol polyoxyethylene ether, polyoxyethylene alkylamine, alkanolamide one of the activators are added to the polishing solution while stirring; the polishing conditions are: the applied pressure is zero, and the flow rate is 4L / min, rotating speed 60rpm / min, temperature 25°C, polishing time 4min. Figure 1-Figure 6 The surface topography diagr...

Embodiment 2

[0032] The preparation method of the polishing liquid that is used to reduce the surface roughness of ULSI multilayer copper wiring: select nano-scale silica sol (15-20nm) to make abrasive material, concentration is 45%, choose 35L, be 1: 2 with deionized water ratio, edge Add the abrasive to the deionized water while stirring, add an appropriate amount of dihydroxyethylethylenediamine to adjust the pH value to 11, and then add 2000mlFA / O type I active agent to the polishing liquid while stirring; the polishing conditions are: the applied pressure is zero , the flow rate is 3L / min, the rotation speed is 30rpm / min, the temperature is 20°C, and the polishing time is 5min. other same

[0033] Example 1.

Embodiment 3

[0035] The preparation method of the polishing liquid that is used to reduce the surface roughness of ULSI multilayer copper wiring: select nano-scale silica sol (15-20nm) to make abrasive material, concentration is 50%, choose 40L, be 1: 3 with deionized water ratio, edge Add the abrasive to the deionized water while stirring, add an appropriate amount of triethanolamine to adjust the pH value to 12, and then add 2500mlFA / O type I active agent to the polishing liquid while stirring; the polishing conditions are: the applied pressure is zero, and the flow rate is 5L / min , rotating speed 120rpm / min, temperature 25°C, polishing time 3min. Others are with embodiment 1.

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Abstract

The invention relates to a method for controlling mechanically polished surface roughness of ULSI multilayer copper wire. It is characterized in that: it uses SiO2 hydrosol at small diameter as abrasive; uses organic alkali as the pH adjuster and complex builder; adds non-ionic surface activator to prepare the polish liquid; the preparation comprises following steps that first, preparing the polish liquid that a, diluting the SiO2 abrasive whose diameter is 15-20nm with the 1-5 times of deionized water; b, using pH adjuster organic alkali to adjust said solution, to make the pH value between 10-12; c, mixing and adding 0.5-10% (volume percentage) aether mellow activator to prepare the polish liquid; then, polishing form 3-5mins, while the flux is 3-5L / min, the temperature is 15-25Deg. C, the rotation speed is 30-120rpm, and the external pressure is zero that there is only the weight of carrier; the invention can effectively reduce the roughness of copper, baffle material and tantalum surface, via the strong complex function and accelerating the surface quantity transmission at alkali condition, with simple process and significant effect.

Description

technical field [0001] The invention relates to chemical mechanical polishing technology, in particular to a roughness control method in chemical mechanical polishing of ULSI multilayer copper wiring. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the production level of integrated circuits has entered the 65nm era. Since the feature size of device design has developed to the nanometer level, the RC delay has an increasing impact on device performance. To achieve high frequency, Metal interconnection structure, the RC delay must be reduced, which requires a three-dimensional multi-layer structure, aluminum as the metal of the interconnection structure has been widely used in VLSI design, but in ULSI design because the metal connection becomes thinner, its As the resistivity increases, the heat generated increases, resulting in serious electromigration, which greatly affects the performance of the device. It is found ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/02C09G1/02C09G1/04
Inventor 刘玉岭刘博
Owner HEBEI UNIV OF TECH
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