Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing super long Nano SiC fibers

A nanofiber, ultra-long technology, applied in the fields of nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the problems of impure products, catalysts, and only a few hundred microns in length.

Inactive Publication Date: 2009-03-11
HARBIN INST OF TECH
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the problems that the original SiC nanofiber preparation method has impure products, needs catalysts, uneven thickness of nanofibers, and the longest product length can only reach several hundred microns.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0009] Specific embodiment one: this embodiment mode is realized through the following steps: (1) take SiO with carbon content quality 10~60% 2 Put the gel powder into the graphite crucible; (2) put the crucible into the atmosphere sintering furnace, and pump the vacuum to make the vacuum degree of the atmosphere sintering furnace below 1 Pa; (3) Fill the atmosphere sintering furnace with argon to make the furnace The internal gas pressure reaches 0.1-2.0MPa; (4) The atmosphere sintering furnace is heated at a heating rate of 5-30°C / min, so that the sintering temperature reaches 1400-1900°C and the temperature is kept for 5-240min; (5) With the furnace Cool to room temperature to obtain ultra-long SiC nanofibers.

specific Embodiment approach 2

[0010] Specific embodiment two: The difference between this embodiment and specific embodiment one is that in step (1) (1), SiO with carbon content of 30% is taken 2 The gel powder was placed in a graphite crucible. Other steps are the same as in the first embodiment.

specific Embodiment approach 3

[0011] Embodiment 3: The difference between this embodiment and Embodiment 1 is that in step (3), argon gas is charged into the atmosphere sintering furnace to make the gas pressure in the furnace reach 0.5Mpa. Other steps are the same as in the first embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

This invention relates to a method for preparing ultra-long SiC nanofibers, which can solve the problems of low nanofibers purity, low yield, ununiformity of nanofibers thickness and short nanofibers (on micrometer scale only) faced by previous techniques. The method comprises: (1) loading SiC gel powder containing C into a graphite crucible; (2) placing the graphite crucible into an atmospheric sintering furnace, and vacuumizing; (3) introducing Ar into the atmospheric sintering furnace to 0.1-2.0 MPa; (4) heating and keeping the temperature; (5) cooling the room temperature to obtain ultra-long SiC nanofibers. The SiC nanofibers prepared by this method are monocrystalline, and have high purity and uniform thickness. The diameters are within 30-300 nm, mainly within 50-150 nm, and the lengths can reach millimeter scale.

Description

technical field [0001] The invention relates to a preparation method of nanofibers. Background technique [0002] Among the many preparation methods of SiC nanowires, chemical vapor deposition (CVD) is a widely used method. During the growth of nanowires, not only the presence of drainage carriers (such as hydrogen and other reducing gases) and catalysts are required, but also It is also difficult to obtain nanofibers with larger sizes, and the obtained SiC nanowires generally only reach tens of microns. The reason is that during the growth of the nanowires, SiO molecules and CO molecules will be taken away by the airflow, and cannot be replenished in the preferential growth direction of the nanowires in time, which will cause many defects and irregularities in the thickness of the nanowires during the growth process. Uniformity, low yield and other shortcomings, of course, it is difficult to prepare very long nanofibers. Contents of the invention [0003] The invention ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/36B82B3/00
Inventor 温广武张晓东
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com