Red light organic electroluminescent device

An electroluminescence and device technology, applied in the field of red light organic electroluminescence devices, can solve problems such as no substantial improvement, and achieve the effects of improving electroluminescence performance, high efficiency, and ensuring color purity

Inactive Publication Date: 2009-03-18
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that although the color purity problem of single-doped red light devices can be solved by using the dual-doping method through waterfall energy transfer, it has not been substantially improved.

Method used

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  • Red light organic electroluminescent device
  • Red light organic electroluminescent device
  • Red light organic electroluminescent device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Doping C545T and DCJTI into Alq 3 As a light-emitting layer, prepared into a structure of ITO / NPB / Alq 3 :C545T: DCJTI / Alq 3 / LiF / Al electroluminescent device. At 10 -4 The organic and metal electrode layers are evaporated under the vacuum of Pa. The evaporation rate of the organic layer is controlled at , LiF evaporation rate control , The metal evaporation rate is controlled at . Alq 3 : C545T: The doping concentration ratio of DCJTI is controlled at 1:0.5%:2%. Among them, the thickness of the NPB layer is 50nm, the doped light-emitting layer is 30nm, and the Alq 3 The layer is 20 nm, the LiF layer is 1 nm, and the Al layer is 100 nm. The resulting device is driven by a DC voltage to obtain DCJTI's red light emission. The maximum power efficiency is 9.4lm / W, the maximum current efficiency is 11.2cd / A, and the maximum brightness can reach 29500cd / m. 2 , The main peak of luminescence is 615nm. Under the same conditions, the maximum power efficiency of the device without C54...

Embodiment 2

[0036] Doping C545T and DCJTI into Alq 3 As a light-emitting layer, prepared into a structure of ITO / NPB / Alq 3 :C545T: DCJTI / Alq 3 / LiF / Al electroluminescent device. At 10 -4 The organic and metal electrode layers are evaporated under the vacuum of Pa. The evaporation rate of the organic layer is controlled at , LiF evaporation rate control , The metal evaporation rate is controlled at . Alq 3 : C545T: The doping concentration ratio of DCJTI is controlled at 1:0.5%:1%. Among them, the thickness of the NPB layer is 50nm, the doped light-emitting layer is 30nm, and the Alq 3 The layer is 20 nm, the LiF layer is 1 nm, and the Al layer is 100 nm. The resulting device is driven by a DC voltage to obtain DCJTI red light, with a maximum power efficiency of 8.91m / W, a maximum current efficiency of 12.6cd / A, and a maximum brightness of 33200cd / m 2 , The main peak of luminescence is 607nm. Under the same conditions, the maximum power efficiency of the device without C545T is only 2.7lm / W...

Embodiment 3

[0038] Doping C545T and DCJTB into Alq 3 As a light-emitting layer, prepared into a structure of ITO / NPB / Alq 3 :C545T: DCJTB / Alq 3 / LiF / Al electroluminescent device. At 10 -4 The organic and metal electrode layers are vapor deposited under the vacuum of Pa’s, and the vapor deposition rate of the organic layer is controlled at , LiF evaporation rate control , The metal evaporation rate is controlled at . Alq 3 The doping concentration ratio of :C545T:DCJTB is controlled at 1:0.5%:0.5%. Among them, the thickness of the NPB layer is 50nm, the doped light-emitting layer is 30nm, and the Alq 3 The layer is 20 nm, the LiF layer is 1 nm, and the Al layer is 100 nm. The resulting device is driven by a DC voltage to obtain DCJTB red light, with a maximum power efficiency of 10.9lm / W, a maximum current efficiency of 11.7cd / A, and a maximum brightness of 23700cd / m 2 , The main peak of luminescence is 612nm. Under the same conditions, the maximum power efficiency of the device without C545...

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Abstract

The invention relate to red light organic electroluminescence device and its manufacture method. By intermingling fluorescence dye C545T(density: 0.2%-2%) which function as sensitizer and red light organic dye(density: 0.5%-5%) with 8- hydroxyl quinoline aluminium, electroluminescence device with a structure of IT0 / NPB / ALq3:C545T:red light dye / Alq3 / liF / Al can be produced. The device is driven by direct current, producing the luminescence of red light dye. Compared with the electroluminescence device without sensitizer C545T, its luminescence efficiency and brightness has been improved markedly, thus commendably realizing red organic electroluminescence.

Description

Technical field [0001] The invention relates to a red light organic electroluminescent device. Background technique [0002] With the rapid development of the electronic information industry, the display plays a vital role as an essential interface for human-computer interaction. The continuous progress of display technology and the continuous emergence of new technologies have driven the leap-forward development of the display industry. As a new generation of flat panel display technology-organic electroluminescent display device, due to its own characteristics, such as simple preparation process, low turn-on voltage, high brightness, high efficiency, fast response speed, active light emission, wide viewing angle, no radiation, easy The realization of large plane, flexible bending and low price, and the progress made in industrialization in recent years, have brought unlimited business opportunities to the flat panel display market. However, for organic electroluminescence displ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H05B33/10H05B33/14H05B33/20
Inventor 马东阁陈江山周全国陈振宇
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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