Fabricating method of semiconductor light-emitting device
A technology of light-emitting devices and manufacturing methods, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as influence, inability to accurately evaluate luminous efficiency, and change of minority carrier lifetime.
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no. 1 approach
[0023] figure 1 is a flowchart showing the steps in the method of manufacturing a nitride-based semiconductor light-emitting device according to the first embodiment of the present invention.
[0024] In the first embodiment, first in step P1, the sapphire substrate (base substrate) is subjected to pretreatment with acid, although this pretreatment of the substrate may be omitted.
[0025] In step P2, as figure 2 As shown in the schematic cross-sectional view of , a multilayer semiconductor film including multilayer semiconductor layers 2-7 is formed on a sapphire substrate 1 using MOCVD (metal organic chemical vapor deposition) (light emitting device growth step). At this time, the sapphire substrate 1 is initially introduced into the reaction chamber of the MOCVD apparatus. The substrate 1 was heated to 1100° C. in a hydrogen atmosphere, and kept at the same temperature for several minutes to clean the substrate 1 .
[0026] Afterwards, the substrate temperature was lowe...
no. 2 approach
[0048] The steps in the manufacturing method according to the second embodiment of the present invention are also figure 1 is shown in the flowchart. The manufacturing method of the second embodiment is generally similar to that of the first embodiment except in the following respects.
[0049] The second embodiment differs from the first embodiment only in that a photoluminescence measurement step P6 for pass / fail judgment of the active layer is additionally performed after the wafer bonding step P5. The purpose of this is to check whether no damage has been done to the active layer in the wafer bonding step P5. The method of pass / fail judgment is the same as that of the first embodiment. All products with internal quantum efficiencies above 50% were advanced to the next steps. In the second embodiment, the manufacturing time per chip is reduced by about 15% compared to the case where the pass / fail judgment step is not performed. In this way, productivity can be improved ...
no. 3 approach
[0052] The steps of the manufacturing method according to the third embodiment of the present invention are also figure 1 is shown in the flowchart. The manufacturing method of the third embodiment is generally similar to that of the first embodiment except for the following points.
[0053] The third embodiment differs from the first embodiment only in that a photoluminescence measurement step P8 for pass / fail judgment of the active layer is additionally performed after the substrate peeling step P7. The purpose of this is to check whether the active layer is not damaged in the substrate peeling step P7. The method of pass / fail judgment is the same as that of the first embodiment. All products judged to be of good quality with internal quantum efficiencies higher than 50% were advanced to the next step. In the third embodiment, the manufacturing time per chip is reduced by about 10% compared to the case where the pass / fail judgment step is not performed. Therefore, produc...
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