Film formation method and apparatus for semiconductor process

Abstract

A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.

Description

[0001] Cross References to Related Applications [0002] This application is based on and claims priority from prior Japanese Patent Application No. 2004-361108 filed on December 14, 2004, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a film-forming method and apparatus for semiconductor processing for forming a silicon oxynitride film (SiON film) on a substrate to be processed such as a semiconductor wafer. Here, the so-called semiconductor processing refers to forming semiconductor layers, insulating layer, conductive layer, etc., in order to manufacture various processes on the substrate to be processed, including semiconductor devices, wiring and electrodes connected to semiconductor devices. Background technique [0004] In the manufacturing process of semiconductor devices, heat treatment, CVD (Chemical Vapor Deposition: Chemical Vapor Deposition) and other treatments are used to form thin ...

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Problems solved by technology

If the silicon oxynitride film is thinned, a slight change in the concentration of nitrogen contained in the silicon oxynitride film will have a large impact on the electrical characteristics of the device

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