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Heat-proof wall, heater keeper tectosome, heating arrangement and substrate processing unit

A technology for a substrate processing device and a heating device, which can be used in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., and can solve problems such as heating element breakage

Active Publication Date: 2009-07-08
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In the case of accumulation of such deformation, or in the case of large deformation, there is a problem that the heating element may be broken

Method used

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  • Heat-proof wall, heater keeper tectosome, heating arrangement and substrate processing unit
  • Heat-proof wall, heater keeper tectosome, heating arrangement and substrate processing unit
  • Heat-proof wall, heater keeper tectosome, heating arrangement and substrate processing unit

Examples

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Embodiment Construction

[0052] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0053] In this embodiment, the heat insulating wall body according to the present invention is installed in a CVD apparatus (batch-type vertical hot-wall diffusion CVD apparatus) which is one embodiment of the substrate processing apparatus according to the present invention. The heater unit of one embodiment of the heating device is used.

[0054] As one embodiment of the substrate processing apparatus of the present invention, a CVD apparatus such as figure 1 As shown, there is provided an upright reaction tube 11 arranged vertically and fixedly supported, and the reaction tube 11 includes an outer tube 12 and an inner tube 13 .

[0055]Outer tube 12 uses quartz (SiO 2 ) and integrally formed into a cylindrical shape, the inner tube 13 uses quartz (SiO 2 ) or silicon carbide (SiC) integrally formed into a cylindrical shape.

[0056] The outer tube 12 is formed i...

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PUM

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Abstract

A heat-insulating wall prevents the heating element from being caught and prevents the deformation of the heating element before it happens. On the side wall of the mounting groove (40) where the heating element (42) is provided, an inclined conical surface (40b, 40c) is provided, and the conical surface (40b, 40c) is directed towards the center of the heat insulating wall body (33) direction and away from the heating element (42). When the heating element (42) moves radially outward in the installation groove (40) with thermal expansion, it can prevent the heating element (42) from being stuck on the tapered surfaces (40b, 40c) of the installation groove (40), so even The heating element (42) shrinks due to cooling down, and the heating element (42) can also move radially inward in the installation groove (40) and return to its original position. By preventing deformation of the heat generating element due to thermal expansion and thermal contraction, breakage of the heat generating element due to thermal expansion and contraction of the heat generating element can be prevented before it occurs, and thus the life of the heat generating element can be extended.

Description

technical field [0001] The present invention relates to a heat insulating wall body, a heat generating body holding structure, a heating device, and a substrate processing device, such as deposition on a semiconductor wafer (hereinafter referred to as wafer) incorporating a semiconductor integrated circuit device (hereinafter referred to as IC) CVD equipment for insulating films, metal films, and semiconductor films, oxide film forming equipment, diffusion equipment, used in thermal treatments such as reflow and annealing for carrier activation and planarization after ion implantation A technology that is effectively used in semiconductor devices such as heat treatment equipment (furnace). Background technique [0002] In an IC manufacturing method, a batch-type vertical hot-wall diffusion CVD apparatus is widely used when performing a film-forming process and a diffusion process on a wafer. [0003] In general, a batch-type vertical hot-wall diffusion CVD apparatus (herein...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205H01L21/22H01L21/324H01L21/00H01L21/67C23C16/00
CPCC23C16/46H01L21/67103
Inventor 杉浦忍立野秀人村田等
Owner KOKUSA ELECTRIC CO LTD
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