Semiconductor element and its producing method

Abstract

A semiconductor element includes a gate structure, a source region, a drain region and a pair of dielectric barrier layers. The gate structure is disposed on the substrate. The source region and the drain region are respectively disposed in the substrate on both sides of the gate structure, wherein a channel region is located under the gate structure and between the source region and the drain region. A pair of dielectric barrier layers are respectively disposed in the substrate under the gate structure and located between the source region and the drain region. The dielectric barrier layer can reduce the drain-induced barrier-reducing effect of nanoscale components.

Description

technical field [0001] The invention relates to a semiconductor element and a manufacturing method thereof, in particular to a metal oxide semiconductor element suitable for nanoscale elements and a manufacturing method thereof. Background technique [0002] With the increasing integration of integrated circuits, the size of semiconductor elements is also shrinking. When the size of Metal Oxide Semiconductor (MOS) transistors shrinks, the channel length must also shrink accordingly. However, the channel size of MOS transistors cannot be scaled down without limit. When its length is reduced to a certain extent, various problems will occur due to the reduction of the channel length. This phenomenon is called the short channel effect. The so-called short channel effect will not only cause the starting voltage of the component (V t ) drops to match the gate voltage (V g ) In addition to problems in the control of MOS transistors, another phenomenon of breakdown effect will a...

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Problems solved by technology

However, since the process of forming such a semiconductor device requires multiple thermal processes, the ions doped in the pocket-type doped region will be diffused, so the effect on suppressing the short channel effect is really limited.

Moreover, setting the pocket-type doped region 116 and the lightly doped region 114 in the semiconductor element will not be conducive to the reduction of the size of the semiconductor element, and cannot improve the integration of the element.

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