Light-emitting device
A technology for light-emitting devices and light-emitting elements, which is applied in the directions of light-emitting materials, lighting devices, fluorescence, etc., can solve the problems of unusable and difficult to obtain products with low correlated color temperature, etc., and achieve the effect of small deviation of black track
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Embodiment 1
[0092] figure 2 Shown is a schematic longitudinal sectional view of a light emitting device according to Embodiment 1 of the present invention. This light emitting device 10 includes: a light emitting element 11 that emits primary light; and a wavelength conversion unit 12 that absorbs at least part of the primary light and emits secondary light having a wavelength equal to or greater than the primary light wavelength. The wavelength conversion unit 12 includes a red light emitting phosphor 13 and a green light emitting phosphor 14 dispersed in a resin.
[0093] In Example 1, a gallium nitride (GaN)-based semiconductor having a peak wavelength of 450 nm was used as a light-emitting element. Ca used as a green light-emitting phosphor is included in the wavelength conversion part 3 (Sc 0.85 Ce 0.15 ) 2 (SiO 4 ) 3 (Particle size: 8.9μm), (Ca 0.98 Eu 0.02 )AlSiN 3 (Particle size: 3.8 μm). These green-based light-emitting phosphors and red-based light-emitting phosphors...
Embodiment 2
[0097] As a light-emitting element, a gallium nitride (GaN)-based semiconductor having a peak wavelength of 435 nm was used. In the wavelength conversion part, 9.3 μm 2 (Ba 0.60 Sr 0.38 Eu 0.02 )O·SiO 2 , and 50% by weight of 10.5 μm 2 (Sr 0.80 Ba 0.18 Eu 0.02 )O·SiO 2 , as a red light-emitting phosphor, a 3.6μm-containing (Ca 0.94 Mg 0.05 Eu 0.01 )(A1 0.99 In 0.01 )SiN 3 The material of these green-based light-emitting phosphors is mixed with the red-based light-emitting phosphor at a weight ratio of 1:0.31, dispersed in epoxy resin, molded, and then the wavelength conversion part is made. In this way, it is made with such figure 2 The light emitting device in Example 2 of the configuration shown.
Embodiment 3
[0101] image 3 Shown is a schematic longitudinal sectional view of a light emitting device according to Example 3 of the present invention. This light-emitting device includes: a light-emitting element 11 that emits primary light; and a wavelength conversion unit 20 that absorbs at least part of the primary light and emits secondary light having a wavelength equal to or greater than the primary light wavelength. The wavelength conversion unit 20 includes a resin layer (red light emitting phosphor layer) 21 containing dispersed red light emitting phosphors and a resin layer (green light emitting phosphor layer) 22 containing dispersed green light emitting phosphors. . Further, the red-based light-emitting phosphor layer 21 is disposed adjacent to the light-emitting element 11 , and the green-based light-emitting phosphor layer 22 is laminated thereon.
[0102] In Example 3, a gallium nitride (GaN) semiconductor having a peak wavelength at 435 nm was used as a light emitting ...
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Abstract
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