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Electro-optical device, electronic apparatus, and method of manufacturing electro-optical device

An electro-optical device and electrode technology, which is used in semiconductor/solid-state device manufacturing, optics, circuits, etc., can solve the problem of lowering the withstand voltage of storage capacitors, and achieve the effects of preventing capacitance deviation, improving reliability, and preventing surface damage.

Inactive Publication Date: 2009-10-07
JAPAN DISPLAY INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, there is a problem that the withstand voltage of the storage capacitor 1h is lowered.

Method used

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  • Electro-optical device, electronic apparatus, and method of manufacturing electro-optical device
  • Electro-optical device, electronic apparatus, and method of manufacturing electro-optical device
  • Electro-optical device, electronic apparatus, and method of manufacturing electro-optical device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0044] (Overall configuration of liquid crystal device)

[0045] figure 1 (a) and (b) are a plan view of a liquid crystal device (electro-optical device) and components formed thereon viewed from the counter substrate side, and a H-H' sectional view thereof, respectively. exist figure 1 In (a) and (b), the liquid crystal device 1 of this mode is TN (Twisted Nematic, twisted nematic) mode, ECB (Electrically Controlled Birefringence, electrically controlled birefringence) mode, or VAN (Vertical Aligned Nematic, vertically aligned Nematic) mode transmissive active matrix liquid crystal device. In this liquid crystal device 1 , the element substrate 10 and the counter substrate 20 are bonded together via a sealing material 22 , and the liquid crystal 1 f is held therebetween. In the element substrate 10, IC60 for driving the data lines and IC30 for driving the scanning lines are mounted in the COG (Chip On Glass) method in the end region located outside the sealing material 2...

Embodiment approach 2

[0083] Figure 6 (a) and (b) are a plan view of one pixel of the liquid crystal device according to Embodiment 2 of the present invention, and a cross-sectional view when the liquid crystal device is cut at a position corresponding to A2-B2. Figure 7 (a) to (g) are cross-sectional views showing steps up to forming source and drain electrodes among the manufacturing steps of the element substrate 10 used in the liquid crystal device 1 of this embodiment. exist Figure 6 In (a), the pixel electrode is represented by a thick and long dotted line, the gate line and the film formed simultaneously are represented by a thin solid line, the source line and the film formed simultaneously are represented by a thin single dotted line, and the thin film formed simultaneously is represented by a thin solid line. And short dashed lines indicate semiconductor layers. In addition, the portion corresponding to the dielectric layer constituting the storage capacitor is shown by a thin dashed...

Embodiment approach 3

[0094] Figure 8 (a) and (b) are a plan view of one pixel of the liquid crystal device in Embodiment 3 of the present invention, and a cross-sectional view when the liquid crystal device is cut at a position corresponding to A3-B3. Figure 9 (a) to (g) are cross-sectional views showing steps up to forming source and drain electrodes among the manufacturing steps of the element substrate 10 used in the liquid crystal device 1 of this embodiment. exist Figure 8In (a), the pixel electrode is represented by a thick and long dotted line, the gate line and the film formed simultaneously are represented by a thin solid line, the source line and the film formed simultaneously are represented by a thin single dotted line, and the thin film formed simultaneously is represented by a thin solid line. And short dashed lines indicate semiconductor layers. In addition, the portion corresponding to the dielectric layer constituting the storage capacitor is shown by a thin dashed-two dotted...

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Abstract

The present invention provides an electro-optical device, an electronic device, and an electronic device capable of suppressing variations in the capacitance of the storage capacitor and a drop in the withstand voltage of the storage capacitor even when a partially thinned gate insulating layer is used as a dielectric layer of the storage capacitor. Apparatus, and method for manufacturing an electro-optical device. When constituting the storage capacitor of the liquid crystal device, after forming the thick lower side gate insulating layer (4a) of the gate insulating layer (4), the lower side gate of the portion overlapping with the lower electrode (3c) is insulated by dry etching Layer (4a) removed. Next, a thin upper layer side gate insulating film (4b) is formed, and this upper layer side gate insulating film (4b) is used as a dielectric layer (4c) of the storage capacitor (1h).

Description

technical field [0001] The present invention relates to an electro-optical device having a thin film transistor and a storage capacitor on an element substrate, electronic equipment, and a method for manufacturing the electro-optic device. Background technique [0002] Among various electro-optic devices, among active matrix type liquid crystal devices, for example, shown in Figure 14 Liquid crystal is held between the element substrate 10 and the counter substrate (not shown) in (a) and (b). In the element substrate 10, thin film transistors 1c for pixel switches and electrical connections are formed in various places in the plurality of pixel regions 1e corresponding to intersections of gate lines 3a (scanning lines) and source lines 6a (data lines). In the pixel electrode 2a in the drain region of the thin film transistor 1c, the orientation of the liquid crystal 1f is controlled for each pixel by an image signal applied to the pixel electrode 2a through the thin film tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/82G02F1/1362
CPCH01L27/13H01L27/1214H01L29/7869G02F1/136213H01L29/4908G02F1/136227H01L27/12H01L27/1255G02F2001/13606G02F1/13606G02F1/136
Inventor 佐藤尚森田聪
Owner JAPAN DISPLAY INC