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Metal substrate based field transmitting display apparatus grid plate and and method for making same and applications

A metal substrate and metal grid technology, which is applied in the manufacture of non-luminescent electrodes, image/graphic display tubes, electrode devices and related components, etc., can solve the problems of difficult processing, difficult application of FED display devices, and high processing costs

Active Publication Date: 2009-10-14
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantage of using glass or ceramic materials as FED grid substrates is that glass or ceramic materials are fragile and difficult to process, which leads to high processing costs of such materials and is difficult to apply to large-area, high-resolution FED display devices superior

Method used

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  • Metal substrate based field transmitting display apparatus grid plate and and method for making same and applications
  • Metal substrate based field transmitting display apparatus grid plate and and method for making same and applications
  • Metal substrate based field transmitting display apparatus grid plate and and method for making same and applications

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Embodiment

[0036] This example has provided the preparation method of the metal grid plate of the FED device of 2 inches discrete structure, and the resolution of grid plate is 72 * 32 (72 * 32 gate hole arrays), and its specification is as follows image 3 shown. The size of each gate hole is approximately 200 microns by 600 microns.

[0037] In this embodiment, No. 304 stainless steel is selected as the grid substrate, and the thickness of the substrate is 150 μm. use figure 1 and 2 The process flow and schematic diagram are given to make the grid plate. First, an array of gate holes 2 is processed on the stainless steel metal substrate 1 by chemical etching. Then electrochemical polishing is used to smooth the surface of the stainless steel and make the edge of the grid hole a curved transition shape3, such as figure 2 as shown in c.

[0038] After the processed gate substrate is cleaned with acetone and alcohol, SiO with a thickness of about 0.5 μm is deposited on the upper an...

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Abstract

The invention discloses a grid plate of a field emission display based on a metal substrate, a preparation method and an application thereof. The invention adopts the metal material as the grid substrate, and prepares the FED grid plate by combining thin film and thick film technology. The method mainly includes the following process steps: first, fabricate a gate hole array on a metal substrate, and perform surface polishing on the substrate surface; then prepare a thin-film insulating layer and a thick-film insulating layer on the substrate; finally, utilize the Grid metal electrode strips are prepared on the layer. The metal substrate-based grid plate of the present invention is suitable for large-area high-resolution field emission displays.

Description

technical field [0001] The invention relates to a method for preparing a grid plate of a field emission display based on a metal substrate, and belongs to the technical field of flat panel display manufacturing. Background technique [0002] A field emission display (Field Emission Display, FED) is a flat panel display whose display performance is comparable to that of a CRT. The FED with discrete structure has been adopted by many companies and research institutes because the various components of the device can be processed separately and then assembled, with high yield and low cost, meeting the requirements of productization. At present, the grid plate of the discrete structure FED usually uses glass or ceramic material as the substrate, and the metal electrode is directly prepared after the grid hole is processed on the grid plate. However, the disadvantage of using glass or ceramic materials as FED grid substrates is that glass or ceramic materials are fragile and diff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J29/02H01J29/46H01J1/46H01J9/14H01J31/12
Inventor 陈军杨国威许宁生邓少芝
Owner SUN YAT SEN UNIV