Method for diagnosing electrostatic chuck and vacuum processing apparatus
A technology of electrostatic chuck and diagnostic method, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., and can solve the problems of electrostatic chucks such as inability to predict life, small changes over time, and inability to use substrate 110, etc., to achieve suppression of defects effect of influence
Active Publication Date: 2009-12-16
TOKYO ELECTRON LTD
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Problems solved by technology
On the other hand, in the Coulomb type electrostatic chuck 100, the change over time is small, so the current value cannot be used as an indicator of life.
[0009] In addition, in an actual plasma processing apparatus, a plurality of processing schemes are prepared, and a variety of set temperatures of the substrate 110 are also prepared in advance, and the margins for the temperature are not all the same. The method of judging the temperature as an indicator of life
[0010] In Patent Document 1, it is described that the technology of predicting the characteristics of the electrostatic chuck before use is described, but the indicators used are current, voltage, etc., and the life of the electrostatic chuck cannot be predicted during the use of the electrostatic chuck, so it cannot solve the problem. The above topics
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[0068] refer to Figure 1 ~ Figure 3 , the first embodiment of the diagnostic method for implementing the electrostatic chuck of the present invention will be described. figure 1 The shown vacuum processing device 2 is, for example, a device for performing plasma processing on a wafer W, and includes, for example: a processing container 21 constituted by a vacuum container whose interior is a closed space; 30 ; and an upper electrode 40 provided above the mounting table 30 so as to face the mounting table 30 .
[0069] The processing container 21 is electrically grounded, and an exhaust device 23 is connected to an exhaust port 22 on the bottom surface of the processing container 21 through an exhaust pipe 24 . A pressure regulator (not shown) is connected to the evacuation device 23, and the pressure regulator is configured to evacuate the inside of the processing chamber 21 and maintain it at a desired degree of vacuum based on a signal from a control unit 2A described lat...
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To predict the service life of an electrostatic chuck by a simple method. The method includes: electrostatically absorbing a substrate by an electrostatic chuck provided on the upper part of a placing pedestal, regularly executing a diagnostic recipe as the same plasma processing in executing plasma treatment for the substrate, adjusting the pressure of a backside gas supplied to a gap between the front surface of the electrostatic chuck and the rear surface of the substrate so that the temperature of each substrate may become a defined temperature at this time, recording the pressure of the backside gas after adjustment, and monitoring a change with time in the pressure of the backside gas. In this way, the service life of the electrostatic chuck can be easily predicted.
Description
technical field [0001] The present invention relates to a technique for diagnosing changes over time in the temperature control performance of an electrostatic chuck used when vacuum processing a substrate. Background technique [0002] In a vacuum processing apparatus that performs vacuum processing such as etching and CVD, a vacuum chuck cannot be used as a unit for holding a substrate on a mounting table. In addition, in order to prevent damage (scratch, warp) to the substrate by the mechanical chuck, etc.), generally use an electrostatic chuck. [0003] Such electrostatic chuck 100, for example as Figure 11 As shown, the surface portion of the mounting table 102 provided in the processing container 103 as a vacuum container is constituted as a thin sheet composed of a dielectric 122 and electrodes 121 provided therein. A power source (not shown) is connected to the electrode 121 , and by applying a voltage to the electrode 121 , the substrate 110 placed on the electros...
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IPC IPC(8): H01L21/00H01L21/683H01L21/02H01L21/67
CPCH01L21/67098H01L21/67248H01L21/6831
Inventor 佐佐木康晴冈城武敏
Owner TOKYO ELECTRON LTD