Unlock instant, AI-driven research and patent intelligence for your innovation.

Process for filling hole of silicon glass doped with boron-phosphorus

A silicon glass and boron-doped technology, which is applied in the field of dielectric layer hole filling technology, can solve the problem of higher hole filling requirements

Active Publication Date: 2009-12-30
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the size of silicon unit devices continues to develop in the direction of deep submicron, and the requirements for hole filling in the PMD process stage are also becoming higher. Especially for some memory products, the aspect ratio (Aspect Ratio) of PMD is even higher. As high as 10:1, some of the commonly used processes can no longer meet this requirement. How to solve the requirement of hole filling in the PMD process stage is very urgent in actual work.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for filling hole of silicon glass doped with boron-phosphorus
  • Process for filling hole of silicon glass doped with boron-phosphorus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0008] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0009] The process principle of the present invention is to improve the traditional BPSG film forming process of 200 torr to a process of 600 torr, so as to significantly improve the hole-filling ability of BPSG. Because the characteristic of subatmospheric pressure chemical vapor deposition (subatmospheric CVD, SACVD) is that the hole filling ability is proportional to the pressure. However, if the pressure is too high, the thickness of the interfacial film will increase, and the instability of the concentration will increase significantly. At the same time, the particles will also become a challenging problem. The process of the present invention successfully solves the above problems by adjusting the settings of the machine and optimizing the recipe. Difficulty, that is, after treatment with nitrogen (N2) to make it dense, the nitr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A silica-glass pore-filling process doped with boron-phosphor is carried out by controlling pressure at 600torr and annealing by nitrogen to make it compact at 800-850degree. It has better BPSG pore-filling ability.

Description

technical field [0001] The present invention relates to a dielectric layer (PMD, Pre-Metal Dielectric) hole filling process before metal deposition in the production and manufacture of integrated circuit memory chips, in particular to a silicon glass (SAT BPSG, boron and phosphorus doped with boron and phosphorous) phosphor-doped oxides) hole filling process. Background technique [0002] At present, the size of silicon unit devices continues to develop in the direction of deep submicron, and the requirements for hole filling in the PMD process stage are also becoming higher. Especially for some memory products, the aspect ratio (Aspect Ratio) of PMD is even higher. As high as 10:1, some of the commonly used processes can no longer meet this requirement. How to solve the requirement of hole filling in the PMD process stage is very urgent in actual work. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a boron-pho...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C03C19/00C03C17/00
Inventor 严玮龚剑峰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP