Photolith exposure method and exposure system

Abstract

The invention discloses an exposure method of lithography, comprising the following steps: detecting the distribution of the stray light on a substrate through a detection chip; determining the location of an exposure field on the substrate; according to the stray light distribution detected by the detection chip and the determined location, calculating the average of the stray light in the exposure field; determining the exposure parameters of the exposure field, according to the average of the stray light in the exposure field; exposing the exposure field based on the exposure parameters; moving to the next field to be exposed on the substrate; and repeating the steps of determining the location of the field to be exposed, calculating the stray light average, determining the exposure parameters and exposing, until all the exposure fields on the substrate are exposed. The invention also discloses an exposure system which can realize the exposure method. The application of the exposuremethod or the exposure system can make up the stray light impact on the sizes of the formed graphics, and improve the accuracy and consistency of the sizes of the graphics.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a photolithographic exposure method and an exposure system. Background technique [0002] The production of semiconductor chips is divided into multiple layers, and the production of each layer needs to be patterned to form specific structures, such as forming contact hole structures or metal wiring structures. The pattern definition of these specific structures is usually done by photolithography. process achieved. The so-called photolithography is a process of transferring the designed structure pattern to the wafer by using a photolithography mask. In the semiconductor manufacturing process, the photolithography process is at the center and is the most important process step in the production of integrated circuits. How to accurately reflect the designed graphics on the photolithography mask and then transfer them to the semiconductor wafer is a key issue ...

AI Technical Summary

Problems solved by technology

However, the detection system used in this detection method is relatively complicated, requiring four slit edges that can be precisely positioned, a special mask, an energy sensor, etc., and this method also requires additional methods to eliminate stray light to achieve a relatively complex and expensive

[0009] In addition, the Chinese patent application with the publication number CN1641485A published on July 20, 2005 also proposed a method for eliminating the influence of stray light on the size of photolithographic patterns. The deviation of the pattern size caused by stray light is corrected by adjusting the pattern size on the photolithography mask or changing the developing conditions, but this method does not take into account the different distribution of stray light in different regions of the entire substrate. Therefore, the deviation of pattern size due to stray light cannot be improved within the entire substrate, and the accuracy and consistency of the formed pattern still cannot meet the requirements of the existing semiconductor manufacturing technology.

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