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Photoresist composition used for micro image pattern and method for forming a integrated circuit pattern

An integrated circuit and patterning technology, which is applied to photosensitive materials, circuits, and patterned surface photoengraving processes for optomechanical equipment. It can solve problems such as pattern collapse, and achieve the effect of reducing collapse and strengthening adhesion.

Active Publication Date: 2010-03-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, thick photoresist layers suffer from pattern collapse

Method used

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  • Photoresist composition used for micro image pattern and method for forming a integrated circuit pattern
  • Photoresist composition used for micro image pattern and method for forming a integrated circuit pattern
  • Photoresist composition used for micro image pattern and method for forming a integrated circuit pattern

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Embodiment Construction

[0056] It is understood that the following disclosure provides different embodiments or examples to implement various embodiments of different features. Specific examples of parts and arrangements are described below to simplify the invention. Of course, the above is only an example and is not intended to limit the present invention. For example, the first feature is formed on or above the second feature. In the following description, several embodiments in which the first feature and the second feature are in direct contact may be included, and additional features may be formed on the first feature. Several embodiments between a feature and a second feature such that the first feature and the second feature are not in direct contact. In addition, the present disclosure may repeatedly refer to figure numbers and / or words in different examples. The above repetition is for the purpose of simplification and clarification, and is not intended to limit the relationship between th...

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Abstract

The invention related to photoresist material for microimage pattern and method of forming integrated circuit pattern, the photoresist material includes a first material, and a second material dispersed in the first material. The second material is capable of diffusing to a top surface of the photoresist material, and has an etch rate different from that of the first material. The forming method of integrated circuit pattern includes at least: a lower layer formed on a substrate; a patterning photoresist layer formed on the lower layer; a top part using the patterning photoresist layer to etchthe lower part; and a main part using the top part to etch the lower part.

Description

technical field [0001] The invention relates to a photoresist material and a method for forming an integrated circuit pattern, in particular to a method for forming a photoresist material for lithography patterning and an integrated circuit pattern that avoids photoresist collapse. Background technique [0002] Semiconductor technology continues to develop towards smaller feature sizes, with dimensions down to 65nm and below 45nm. The patterned photoresist layer used to generate the aforementioned fine feature sizes generally has a high aspect ratio. Maintaining a predetermined critical dimension (CD) becomes difficult for various reasons. For example, in order to maintain high etch resistance, a thick photoresist layer is usually used. However, a photoresist layer with a large thickness suffers from pattern collapse. Contents of the invention [0003] The purpose of the present invention is to overcome the defects in the prior art and provide a photoresist material for...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/075G03F7/004G03F7/00H01L21/027
CPCG03F7/094G03F7/091G03F7/0757G03F7/0047G03F7/11
Inventor 张庆裕
Owner TAIWAN SEMICON MFG CO LTD