Semiconductor device and manufacturing method for the same

Abstract

To provide a semiconductor device with high performance and reliability, in which peeling off an interconnection layer caused due to peeling off of a resin film at a land part is suppressed and thus electrical break down is prevented, and an efficient method for manufacturing the semiconductor device. The semiconductor device includes a semiconductor substrate (e.g., a silicon wafer 10 ); an insulating film 12 formed on the semiconductor substrate 10; a conductive layer 20 formed on the insulating film 12, the conductive layer 20 formed of an interconnection part 22 and a land part 24 which connects the interconnection part 22 to an external terminal 40; and a resin film 30 covering the conductive layer 20, wherein the resin film 30 is in contact with the insulating film 12 at least at a part of the land part 24 by passing through the conductive layer 20.

Description

[0001] Cross References to Related Applications [0002] This application is based on and claims priority from prior Japanese Patent Application No. 2006-028850 filed on February 6, 2006, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a semiconductor device having high performance and high reliability, in which peeling of an interconnection layer due to peeling of a resin film at a pad portion is suppressed, and an efficient manufacturing method thereof is avoided, thereby avoiding electrical breakdown. Background technique [0004] In recent years, with the development trend of thinner and smaller electronic devices, people are trying to reduce the size of semiconductor devices and increase the packaging density of semiconductor devices. Against this background, wafer-level packaging has been proposed, which reduces the size by minimizing the size of a semiconductor device to be as close as possi...

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the end of the resin film is likely to come off due to the poor adhesion between the interconnection and the resin film

The adhesion between the interconnect and the resin film is susceptible to environmental conditions, i.e. the resin film tends to fall off under the action of heat and stress

For example, when a semiconductor device is subjected to a high-low temperature cycle test as a reliability evaluation test, the opening of the resin film degrades to cause the resin film to peel off, which can sometimes lead to the peeling off of the interconnection

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