Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A programming method for a threshold pressure-controlled phase-change random access memory

A technology for accessing memory and programming method, which is applied in the field of phase change random access memory, and can solve problems such as difficult programming

Inactive Publication Date: 2007-08-22
SAMSUNG ELECTRONICS CO LTD
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it may be difficult to achieve reliable programming

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A programming method for a threshold pressure-controlled phase-change random access memory
  • A programming method for a threshold pressure-controlled phase-change random access memory
  • A programming method for a threshold pressure-controlled phase-change random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] A PRAM programming method according to a preferred embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

[0021] FIG. 1 is a schematic diagram illustrating an array of phase change random access memory (PRAM) devices employing a programming method according to the present invention. Referring to FIG. 1, a plurality of word lines and a plurality of bit lines are arranged in an X-Y matrix, and PRAM devices are arranged around respective intersections between the plurality of word lines and a plurality of bit lines.

[0022] Due to the electrical characteristics of PRAM devices without selection switches, cells in which PRAM devices are arranged selectively store logic low or logic high. A logic low "0" and a logic high "1" are stored as the difference between two threshold voltages Vth-H and Vth-L. The selection of the low voltage Vth-H and the high voltage Vth-L depends on the programming method of the presen...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A programming method for a phase-change random access memory (PRAM) may be provided. The programming method may include determining an amorphous state of a chalcogenide material using programming pulses to form programming areas having threshold voltages corresponding to logic high and logic low, and / or controlling a trailing edge of programming pulses during programming to control a quenching speed of the chalcogenide material so as to adjust a threshold voltage of the chalcogenide material. Accordingly, programming pulses corresponding to logic low or logic high may have uniform magnitudes regardless of a corresponding logic level. Accordingly, reliability of a PRAM device may be improved.

Description

technical field [0001] The present invention relates to phase change random access memory (PRAM) for threshold voltage control, and more particularly, to a programming method for programming an amorphous state to control the threshold voltage of the PRAM. Background technique [0002] A general phase change random access memory (PRAM) utilizes a resistance difference between an amorphous state (phase) and a crystalline state of chalcogenide. A disadvantage of such a PRAM is that a high current is required for a phase change, and thus the size of a cell included in the PRAM is relatively large. [0003] Chen et al. propose a PRAM that can be programmed using threshold voltage differences without phase transitions. The PRAM proposed by Chen et al. is characterized in that each cell included in the PRAM does not require an access transistor due to self-rectification, and thus a high-density design can be realized. [0004] However, the PRAM proposed by Chen et al. adopts a me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/24H01L45/00H01L21/82G11C11/56G11C16/02
CPCG11C7/1096G11C13/0004G11C13/0069
Inventor 徐东硕李殷洪卢振瑞
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com