Plasma processing apparatus and method

Abstract

The invention provides plasma processing method and plasma processing device, which can automatically judge the kind of baseplates and automatically choose corresponding endpoint detection setting to the judged baseplates, to accurately detect the endpoint without the limit of the kind of the baseplates. Crystal wafer kind datas and optical datas are prearranged corresponding to plenty of crystal types, computes crystal wafer kind datas (S221, S222) from start by correlativity when plasma processes crystal, judges the crystal wafer kind (S223) based on the crystal wafer kind datas, chooses endpoint detection setting datas (S224) corresponding to the judged crystal wafer kind from the endpoint detection setting datas stored in the data storage unit, and processes the endpoint detection of the plasma processing based on the chosed endpoint detection setting datas.

Description

technical field [0001] The present invention relates to a plasma processing method and a plasma processing apparatus for processing substrates such as semiconductor wafers and liquid crystal substrates using plasma. Background technique [0002] Conventionally, substrate processing (for example, etching processing, film formation processing, etc.) using plasma is widely used in semiconductor manufacturing processes and LCD substrate manufacturing processes. As a plasma processing apparatus used in such plasma processing, there are, for example, an upper electrode and a lower electrode arranged in parallel to each other in a processing chamber, and a substrate such as a semiconductor wafer (hereinafter referred to as "wafer") is placed on the lower electrode, A high-frequency power is applied between the upper electrode and the lower electrode to generate plasma of a process gas, and a film to be etched is etched using, for example, a patterned mask. [0003] In such a plasm...

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Problems solved by technology

[0007] However, in the case of performing plasma processing on a wafer in this way, in the prior art, the detection of the end point of the plasma processing is performed without limiting the type of mask pattern, so even the type of material of the mask Similarly, the end point may be shifted depending on the type of mask pattern, so that the end point cannot be detected correctly. This problem was explained by the experiments of the present inventors.

That is, if the type of the mask pattern is different, the characteristics of the optical data obtained in the plasma processing are also different. Therefore, if the end point of the plasma processing is detected based on such optical data, the type, an offset occurs at the end point, and the end point cannot be detected correctly

[0008] In this case, although it is considered that different wafers can be processed according to the type of mask pattern, that is, depending on the type of wafer, the operator can change the end point detection method of plasma processing, etc., to perform processing, but every Every time a wafer is processed, it is necessary to confirm the type of the wafer, and the method of endpoint detection must be changed every time, so it is troublesome and reduces productivity.

This situation does not exist only when the types of mask patterns are different. For example, the same problem exists when the types of mask materials or the film quality of the film to be etched are different.

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