Method of preparing nano silicon line without metal catalyst under low temperature

A metal and catalyst-free technology, applied in chemical instruments and methods, inorganic chemistry, nanotechnology, etc., can solve the problems of not reflecting the real performance of silicon nanowires, unsuitable for industrial production applications, and increasing the production cost of nanosilicon wires. Achieve the effect of industrialized preparation, low cost and simple equipment

Inactive Publication Date: 2010-05-19
ANHUI UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the metal Au catalyst needs to be added in the preparation process, the real performance of silicon nanowires cannot be reflected in the material characterization. What is especially bad is that the solvent is organic and toxic, which pollutes the environment very much, so it is not suitable for industrial production applications.
[0004] In summary, although the preparation process of nano-silicon wires is becoming more and more mature, the preparation temperature is high, usually higher than 500 ° C, and metal catalysts need to be added, which increases the production cost of nano-silicon wires and limits the application of nano-silicon wires.

Method used

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  • Method of preparing nano silicon line without metal catalyst under low temperature
  • Method of preparing nano silicon line without metal catalyst under low temperature
  • Method of preparing nano silicon line without metal catalyst under low temperature

Examples

Experimental program
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Effect test

Embodiment 1

[0027] Example 1: Mix 1% of the total amount of silica sol with silicon tetrachloride and place it in a sealed reactor. The total amount of raw materials accounts for 5% of the reactor container. Temperature and 1MPa pressure were kept for 1 hour, and nanometer silicon wires with an average diameter of about 200nm and an average length of about tens of microns were prepared.

Embodiment 2

[0028] Example 2: Mix silica sol and silicon tetrachloride accounting for 5% of the total amount and place it in a sealed reactor. The total amount of raw materials accounts for 5% of the reactor container. Temperature and pressure of 1 MPa were kept for 12 hours, and nano silicon wires with an average diameter of about 200 nm and an average length of about tens of microns were prepared.

Embodiment 3

[0029] Example 3, after mixing 5% of the total amount of silica sol and silicon tetrachloride, place it in a sealed reactor. The total amount of raw materials accounts for 8% of the reactor container. Temperature and 4MPa pressure were kept for 1 hour, and nano silicon wires with an average diameter of about 180 nm and an average length of about tens of microns were prepared.

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Abstract

The invention discloses a making method of nanometer sillimanite without metal catalyst in the nanometer material preparing and applying technical domain, which comprises the following steps: adoptingsilicon tetrachloride and 0. 1-20% silicasol as raw material; making the total quantity of raw material not more than 10% filling degree of autoclave reactor; placing the material in the seal autoclave after blending; insulating at 200-400 deg. c under 1-10Mpa for 1-24h; stirring evenly. The invention reduces the preparing temperature, simplifies the preparing course without using metal catalyst,which saves the preparing cost for industrial manufacturing.

Description

Technical field: [0001] The invention belongs to the technical field of preparation and application of nanometer materials, and in particular relates to a method for preparing nanometer silicon wires without metal catalysts at low temperature. Background technique: [0002] Nano-silicon wire is a new type of nano-information material developed in recent years. It has great application prospects in nano-devices such as field emission displays and nano-sensors, field-effect transistors, single-electron detectors and counters, and single-electron memories. Laser ablation, chemical vapor deposition (CVD), template and solvothermal synthesis methods can be used to prepare nano-silicon wires by adding metal catalysts, but the silicon nano-wires obtained by these methods will always be polluted by metal catalysts, which is not conducive to its application. Using silicon and silicon oxide as raw materials, laser ablation or direct thermal evaporation can increase the yield of nano-s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/021B82B3/00
Inventor 裴立宅
Owner ANHUI UNIVERSITY OF TECHNOLOGY
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