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Wet etching method for gallium arsenide/aluminum arsenide distributed Bragg reflector

A Bragg reflector and wet etching technology, applied in semiconductor/solid-state device manufacturing, lasers, electrical components, etc., can solve the problems of serious heating of P-type DBR, large series resistance, affecting device lasing, etc.

Inactive Publication Date: 2007-10-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0003] However, because the doped DBR high-reflection film forms a homogeneous heterojunction, the series resistance is very large, especially the large effective mass of the holes leads to very serious heating of the P-type DBR, and even affects the lasing of the device. When designing the VCSEL structure, the P-type electrode is often used as an internal electrode, so that when the current is injected into the active area, it does not pass through the upper DBR to reduce heat generation.

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  • Wet etching method for gallium arsenide/aluminum arsenide distributed Bragg reflector
  • Wet etching method for gallium arsenide/aluminum arsenide distributed Bragg reflector
  • Wet etching method for gallium arsenide/aluminum arsenide distributed Bragg reflector

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[0024] See also shown in Fig. 1, a kind of wet etching method of gallium arsenide / aluminum arsenide distributed Bragg reflector of the present invention is characterized in that, comprises the following steps:

[0025] (A) On the substrate 10, a gallium arsenide buffer layer 20 is epitaxially grown by molecular beam epitaxy, the substrate 10 is semi-insulating gallium arsenide, and the thickness of the gallium arsenide buffer layer 20 is 200 nm;

[0026] (B) growing a plurality of periodically distributed Bragg reflectors 30 on the gallium arsenide buffer layer 20, wherein the plurality of periodically distributed Bragg reflectors 30 include: a gallium arsenide layer 31 and aluminum arsenide grown on the gallium arsenide layer 31 Layer 32, wherein the period number of the multiple periodically distributed Bragg reflectors 30 is 7, the thickness of the gallium arsenide layer 31 is 70nm, and the thickness of the aluminum arsenide layer 32 is 158nm;

[0027] (C) Photolithography ...

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Abstract

A type of damp corrupting method of gallium arsenide / aluminium arsenide distributing Prague reflector that characterized in that it includes following steps: (A) on the underlay, the gallium arsenide cushion layer is generated extendedly by method of molecule beam extension; (B) generating several period distribution Prague reflector on the gallium arsenide cushion layer; (C) photoetching the distribution Prague reflector to form photosensitive resist pattern, light possesses width of photosensitive resist in the photosensitive resist pattern; (D) eating off the part of the distribution Prague reflector by cauterization solution; (E) cauterization solution and selective cauterization solution are alternatively used to etch the distribution Prague reflector, so the required cauterization depth can be achieved precisely.

Description

technical field [0001] The invention belongs to a part of the vertical cavity surface emitting laser (VCSEL) manufacturing process, and mainly relates to a method for precisely controlling the etching depth of a gallium arsenide (GaAs) / aluminum arsenide (AlAs) distributed Bragg reflector (DBR). Background technique [0002] Due to the advantages of low threshold, single longitudinal mode operation, easy integration and optical coupling, vertical cavity surface emitting laser (VCSEL) has attracted widespread attention of scientists and has become one of the research hotspots in the field of optoelectronics. It has a very broad application prospect. The VCSEL resonant cavity is formed by two upper and lower Bragg reflectors (DBR) sandwiching the active region resonant cavity in the middle. DBR is composed of two semiconductor materials stacked with a thickness of λ / 4, and has a reflectivity of more than 99%. [0003] However, because the doped DBR high-reflection film forms ...

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Application Information

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IPC IPC(8): H01S5/183H01S5/187C23F1/16H01L21/3063
Inventor 李若园徐波王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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