Epitaxial wafer growth method for improving galliumnitride base LED chip antistatic capability

An LED chip, GaN-based technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as failure and failure of LED devices, and achieve the effect of improving crystal quality and anti-ESD yield.

Inactive Publication Date: 2007-11-14
何清华
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  • Abstract
  • Description
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Problems solved by technology

[0005] Electrostatic discharge can cause sudden failure or potential failure of LED devices, and ESD damage is the main cause of LED device failure

Method used

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  • Epitaxial wafer growth method for improving galliumnitride base LED chip antistatic capability
  • Epitaxial wafer growth method for improving galliumnitride base LED chip antistatic capability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Growth by MOCVD method:

[0023] 1) Load the (0001) no-clean sapphire substrate into the reactor, and 2 Heat to 1100°C and bake for 10 minutes under atmosphere.

[0024] 2) Cool down to 550°C to grow LT-GaN Buffer with a thickness of 25nm, the growth pressure is 300Torr, the TMGa flow rate is 130 micromol / min, NH 3 The flow rate was 150 mmol / min.

[0025]3) A u-GaN layer with a thickness of 1.0 μm was grown at 1050 ° C, the growth pressure was 300 Torr, the flow rate of TMGa was 515 micromol / min, NH 3 The flow rate was 480 mmol / min.

[0026] 4) An n-GaN layer with a thickness of 3.5 μm was grown at 1050° C., the growth pressure was 200 Torr, the flow rate of TMGa was 650 μmol / min, and NH 3 The flow rate is 900 mmol / min, and the amount of Si doped in the n-GaN layer is 55 nmol / min.

[0027] 5) Grow 6 cycles of MQW layer under N2 atmosphere, the growth pressure is 200Torr, NH 3 The flow rate is 1000 mmol / min, InGaN well layer: thickness is 3.0nm, growth temperature ...

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Abstract

This invention is one nitride gallium base LED extension piece growth method, in which form electric current release channel in the p-GaN layer, and carrie on a time of temperature decrease and heating-up annealing treatment to eliminate part accumulative stress to improve the crystal quality of said extending layer and increase the anti-ESD ability of GaN-base LED chip.

Description

technical field [0001] The invention relates to a heterogeneous epitaxial growth method of gallium nitride (GaN) and its compound thin films, in particular to introducing uniformly distributed defects during the growth process of p-type gallium nitride layer (p-GaN) to form current release channels and pass through A GaN-based LED epitaxial wafer growth method that reduces stress and improves crystal quality. Background technique [0002] Group III-V nitride materials based on GaN, InGaN, and AlGaN alloys have a direct wide band gap and are continuously adjustable (1.8-6.2eV), covering a wide spectral region from infrared to ultraviolet, and are ideal for manufacturing high-brightness blue and green It is an ideal material for light and white light-emitting diodes (LED, Light Emitting Diode), and is widely used in large-screen color displays, traffic signals, lighting, optical communications and other fields. [0003] GaN on sapphire (Al 2 o 3 ) on the substrate, due to t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 何清华田艳
Owner 何清华
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