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Method for preparing group III nitride substrate

A nitride and substrate technology, which is applied in the field of preparing III-nitride substrates, can solve problems such as cracking and deformation, and achieve the effects of avoiding cracking or bending deformation, releasing stress, and ensuring flatness

Active Publication Date: 2011-05-11
SUZHOU NANOWIN SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a III-nitride substrate, to solve the effects of cracking and deformation caused by stress, and to obtain a flat and thick nitride substrate

Method used

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  • Method for preparing group III nitride substrate
  • Method for preparing group III nitride substrate
  • Method for preparing group III nitride substrate

Examples

Experimental program
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Embodiment 1

[0027] Embodiment one: see attached figure 1 to attach image 3 The growth of GaN on a sapphire substrate with a thickness greater than 10 μm is shown.

[0028] as attached figure 1 As shown, first a layer of GaN with a thickness of 2 microns is grown on the sapphire substrate 1 by HVPE, and the growth method may also be MOCVD or MBE. Then cool down and take out the sample, such as figure 2 The high-energy laser 3 is incident from the back of the substrate, and the interface is scanned by scanning such as image 3 The graph shown, in such a way that the GaN and substrate interface is irradiated from the back of the substrate with a short-wavelength laser in the wavelength range of photon energies between sapphire and the bandwidth of the thin-film material, so that when the laser light penetrates the substrate There is no absorption, but the energy of the laser is completely absorbed by the film 2, and local melting and decomposition are realized at the interface between ...

Embodiment 2

[0029] Embodiment 2. Growth of an AlGaN substrate with a thickness greater than 10 microns on a sapphire substrate.

[0030] First, a layer of GaN with a thickness of 1 micron is grown on the sapphire substrate by MOCVD method. Then cool down and take out the sample, such as figure 2 The high-energy laser is incident from the back of the substrate, and the interface is scanned by scanning such as image 3 the graph shown. Then the sample is heated to 1100°C in HVPE to directly grow AlGaN, in which the weight ratio of Al in the metal composition can be any composition from 0% to 100%. According to the composition of Al and the thickness to be grown, the above method can be used multiple times.

Embodiment 3

[0031] Embodiment 3, GaN self-supporting homogeneous substrate growth.

[0032] First, a layer of GaN with a thickness of 2 microns is grown on a sapphire substrate with HVPE, and the growth method can also be in MOCVD or MBE. Then cool down and take out the sample, such as figure 2 A high-energy laser is incident from the back of the substrate, and a stripe pattern is scanned on the interface by scanning. attached Figure 4 shows a laser scanning pattern that can realize the peeling and separation of GaN thin film and sapphire substrate during in-situ growth process. When the GaN film is grown to more than 100 microns, the complete separation of the GaN film and the substrate is realized under the action of the growth stress. After separation and continuous growth, a GaN self-supporting homogeneous substrate can be obtained.

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Abstract

The invention discloses a method for preparing nitride substrate. It is characterized in that it comprises following steps: (1) growing nitride film on aquamarine substrate, the film thickness is between 50 nanometer and 50 micrometre; (2) irradiating with high- energy laser from back of substrate, to make incomplete separation of nitrite from aquamarine substrate, the separation area is 10- 99% of the total area; the photoelectron energy of said high- energy laser is between the bandwidth of nitrite and aquamarine substrate; (3) growing nitrite film continuously by taking halide gas epitaxial growth method until getting required thickness, and getting said nitride substrate. The invention can gurantte the film planeness, automatic complete separtion of film from aquamarine substrate at original position, and gets self- support epitaxial film with required thickness.

Description

technical field [0001] The invention relates to a method for preparing a III-nitride substrate by vapor phase epitaxial growth, which is used to obtain a large-area III-nitride substrate, and any component III-nitride thick-film substrate and self-supporting single crystal substrate. Background technique [0002] For the application of Group III nitride materials, after more than ten years of research and development, breakthroughs have been made in blue light-emitting diodes, short-wavelength lasers, ultraviolet detectors and LED white light illumination sources. The further improvement of device performance and the design and manufacture of some new devices are limited by the substrate material and the quality of the epitaxial film in the device structure. Many methods have been reported to improve the quality of epitaxial films, such as lateral epitaxy, multi-buffer layer technology, etc. Obtaining high-quality GaN substrates has always been the goal pursued by people. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/02C30B25/14
Inventor 徐科杨辉王建峰张宝顺
Owner SUZHOU NANOWIN SCI & TECH
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