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Polishing slurry, method of producing same, and method of polishing substrate

A technology of polishing slurry and forced dispersion, which can be used in polishing compositions containing abrasives, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve the problem of lack of particle dispersion methods and instructions.

Active Publication Date: 2007-12-26
K C TECH +1
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0009] However, the above patent technology only provides the average particle size and range of the polishing particles in the slurry, and lacks an explanation of the particle dispersion method

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  • Polishing slurry, method of producing same, and method of polishing substrate
  • Polishing slurry, method of producing same, and method of polishing substrate
  • Polishing slurry, method of producing same, and method of polishing substrate

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Embodiment Construction

[0037] The preparation method of the polishing slurry in the present invention and the analysis of the properties of the polishing slurry will be described in detail below. In addition, the present invention will also illustrate the preparation method of polishing slurry using cerium oxide as polishing particles, and the method of using deionized water and anionic polymer as dispersant. Finally, this paper will also give the experimental results of the CMP process, that is, how the oxide film polishing rate and selectivity depend on the process conditions. The present invention may require further improvement in the future, and its scope of application is not limited to the scope discussed herein.

[0038] [Preparation method of ceria polishing slurry]

[0039] The ceria polishing slurry of the present invention comprises ceria powder, deionized (DI) water, anionic polymer dispersant and additives such as weak acid or base. The preparation method of the polishing slurry incl...

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Abstract

Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 mum or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Description

[0001] This application is a divisional application with the filing date of the original application on July 27, 2005, the application number: 200510087181.7, and the name: "polishing slurry and its preparation method and method for polishing a substrate". technical field [0002] The present invention relates to a polishing slurry, specifically a chemical mechanical polishing (hereinafter referred to as 'CMP') slurry, which can be used for chemical mechanical polishing of the surface of a semiconductor wafer. More specifically, the present invention relates to a method for preparing a high-performance polishing slurry and a method for polishing a substrate. This polishing slurry has a high selectivity for the nitride layer used as a barrier film in the shallow trench isolation CMP process of the 256M or higher D-RAM ultra-highly integrated semiconductor silicon wafer (design standard ≤0.13μm) manufacturing process and reduces the appearance of microscopic scratches on polishe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/304
CPCC09G1/02H01L21/31051
Inventor 金大亨洪锡敏全宰贤白云揆朴在勤金容国
Owner K C TECH
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