Substrate processing method and substrate processing apparatus

A substrate processing method and a substrate processing device technology, which are applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of substrate pollution, collapse, and time spent on rinsing, and achieve the effect of preventing pattern collapse

Inactive Publication Date: 2008-01-02
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, there is a problem that as the drying process progresses, a liquid-gas interface appears on the substrate, so that the fine patterns approach each other and collapse due to the negative pressure generated in the gap between the patterns.
Therefore, there is a problem that it takes a corresponding amount of rinsing time to remove the treatment liquid (chemical solution or developer) and useless substances adhering to the surface of the substrate, and the consumption of IPA also increases.
[0015] Furthermore, foreign matter particles may be contained in IPA to some extent, so the following problem may occur: as described above, if the supply amount of IPA supplied to the substrate increases, the foreign matter particles contained in the IPA will accumulate on the substrate, causing the substrate to anti-pollution
As a result, the collapse of the pattern and the occurrence of watermarks during drying of the substrate cannot be sufficiently prevented

Method used

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  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus
  • Substrate processing method and substrate processing apparatus

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Effect test

no. 1 approach

[0062] FIG. 4 is a diagram showing a first embodiment of the substrate processing apparatus of the present invention. In addition, FIG. 5 is a block diagram showing a control structure of the substrate processing apparatus of FIG. 4 . This substrate processing apparatus is a single-sheet substrate processing apparatus for cleaning processing for removing contaminants adhering to the surface Wf of a substrate W such as a semiconductor wafer. Specifically, this is an apparatus in which chemical solution treatment with a chemical solution such as hydrofluoric acid and pure water or After the rinsing treatment with rinsing solution such as DIW, the substrate W wetted with the rinsing solution is subjected to a replacement treatment described later, and then the substrate W is subjected to drying treatment.

[0063] This substrate processing apparatus includes: a spin chuck 1 that rotates the substrate while holding the substrate in a substantially horizontal posture with its surf...

no. 2 approach

[0101] FIG. 10 is a diagram showing a second embodiment of the substrate processing apparatus of the present invention. In addition, FIG. 11 is a block diagram showing a control structure of the substrate processing apparatus of FIG. 10 . The substrate processing apparatus of the second embodiment differs greatly from the first embodiment in that a blocking member 9 functioning as an "environment blocking device" of the present invention is provided above the spin chuck 1 . In addition, since other structures and operations are basically the same as those of the first embodiment, the same reference numerals are assigned here, and descriptions thereof are omitted.

[0102] The blocking member 9 is a disk-shaped member having an opening at the center, and is positioned above the spin chuck 1 . The lower surface (bottom surface) of the blocking member 9 is formed as an opposing surface substantially parallel to the substrate surface Wf, and its planar size is formed to be larger...

no. 3 approach

[0111] 12A, 12B, and 12C are diagrams showing a third embodiment of the substrate processing apparatus of the present invention. A significant difference between the substrate processing apparatus of the third embodiment and the first and second embodiments is that a pre-drying process is performed after the replacement process and before the drying process. In addition, since the other configurations and operations are basically the same as those of the second embodiment, the same reference numerals are assigned here, and description thereof will be omitted.

[0112] In this embodiment, after the replacement with the mixed solution (replacement step) and before the substrate W is dried (drying step), a drying pretreatment step as described below is performed. First, the liquid mixture is supplied to the substrate surface Wf to form the liquid mixture layer 21 in the liquid immersion state on the entire substrate surface ( FIG. 12A ). Next, nitrogen gas is sprayed from the ga...

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Abstract

After rinsing, while rotating a substrate, a front layer part of a rinsing liquid (DIW) adhering to a substrate surface is drained and removed from the substrate surface. This is followed by supply to the substrate surface of a liquid mixture which is obtained by mixing IPA and DIW together. Since a majority of the rinsing liquid on the substrate surface is removed off from the substrate surface, even when micro patterns are formed on the substrate surface, the liquid mixture replaces the liquid component adhering to the gaps between the patterns. Further, the IPA concentration in the liquid mixture supplied to the substrate surface is set to 50% or below. Hence, it is possible to effectively prevent destruction of the patterns while suppressing the consumption amount .

Description

technical field [0001] The present invention relates to a substrate processing method and a substrate processing device for drying a substrate surface wetted with a liquid. In addition, substrates to be subjected to drying treatment include semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for optical discs, and the like. Background technique [0002] Many drying methods have been proposed in the past to remove the rinse solution adhering to the surface of the substrate after the chemical solution treatment with the chemical solution and the rinsing treatment with the rinse solution such as pure water. As one of the methods, a drying method using an organic solvent component such as IPA (IsoPropyl Alcohol: isopropyl alcohol) is known. In particular, so-called rotary (Rotagoni) drying is known in which a convection (Marangoni effect: Marangoni effect) drying process and a spin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/30H01L21/67H01L21/027G03F7/30
Inventor 宫胜彦泉昭
Owner DAINIPPON SCREEN MTG CO LTD
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