Production and test approach for internal memory performance

Abstract

The invention discloses a manufacturing test method for memory performance, which comprises the following procedures: the method comprises at least one of the following testing methods: test the reading stability of memory after writing with large size CACHE; test the stability of memory in large span jump writing with CACHE random address. Compared with the RAM stress test commonly adopted in the industry, the testing method in the invention saves the testing time, enhances the testing efficiency and is suitable for manufacturing test; compared with the functional testing method adopted commonly in manufacturing test, the invention is able to supplement the latter's insufficiency in the testing of memory performance (stability of memory particle).

Description

technical field

[0001] The invention relates to a memory test method, in particular to a fast and efficient memory performance production test method. Background technique

[0002] In the field of computer and communication, the performance of various memories (including SRAM, SDRAM and DDR SDRAM) directly affects the stability of the single board and even the system. How to quickly, efficiently and comprehensively test memory has always been a subject of research in the industry.

[0003] At present, the industry mainly uses a memory stress test (RAM Stress Test) to conduct a comprehensive test on the memory. The advantage is that the test is relatively comprehensive and reliable, but the disadvantage is that it takes too long and requires an independent test environment for memory, which is not suitable for mass production testing.

[0004] In production testing, simple functional tests are often used on storage devices, such as testing the data lines, address lines, and...

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