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Structures of high-voltage mos devices with improved electrical performance

A semiconductor, conductivity type technology, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of output resistance and component reliability, and achieve the effect of improving reliability and reducing P-type impurity atoms.

Active Publication Date: 2008-01-23
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It indicates output resistance issues that will cause component reliability issues

Method used

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  • Structures of high-voltage mos devices with improved electrical performance
  • Structures of high-voltage mos devices with improved electrical performance
  • Structures of high-voltage mos devices with improved electrical performance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0054] Figures 3 to 8A show a preferred embodiment of the present invention, and the variations of the preferred embodiment will be discussed next.

[0055] Referring to Fig. 3, a substrate 20 is provided in Fig. 3. The substrate 20 preferably includes a semiconductor material such as silicon, but other semiconductor materials may also be used for the substrate 20. Preferably, the substrate 20 is lightly doped with P-type impurities, but the substrate 20 can also be lightly doped with N-type impurities.

[0056] The photoresist 22 is formed and patterned using etching technology. A high-voltage reverse punch-through region 24 is formed, which is also called a high-voltage N-type reverse punch-through region HVNAPT, because the reverse region in the high-voltage reverse punch-through region 24 is N-type. The high-voltage N-type reverse punch-through region 24 is preferably doped with P-type impurities, such as boron and / or indium. Preferably, the concentration of the P-type impurit...

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PUM

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Abstract

A semiconductor structure includes a first high-voltage well (HVW) region of a first conductivity type overlying a substrate, a second HVW region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first HVW region, and a third HVW region of the second conductivity type underlying the second HVW region. A region underlying the first HVW region is substantially free from the third HVW region, wherein the third HVW region has a bottom lower than a bottom of the first HVW region. The semiconductor structure further includes an insulation region in a portion and extending from a top surface of the first HVW region into the first HVW region, a gate dielectric extending from over the first HVW region to over the second HVW region wherein the gate dielectric has a portion over the insulation region, and a gate electrode on the gate dielectric.

Description

Technical field [0001] The present invention relates to semiconductor devices, in particular to metal oxide semiconductor (MOS) devices, and more particularly to the structure and manufacturing method of high voltage metal oxide semiconductor devices. Background technique [0002] High-voltage metal oxide semiconductor components are widely used in many electronic devices, such as input / output circuits, central process unit (CPU) power supply, power management systems, AC / DC converters, and so on. [0003] There are many different types of high-voltage metal oxide semiconductor components. The symmetrical high-voltage metal oxide semiconductor device has a symmetrical structure at the source terminal and the drain terminal, and high voltage can be applied to the source terminal and the drain terminal. The asymmetric high-voltage metal oxide semiconductor device has an asymmetric structure at the source terminal and the drain terminal. For example, only one of the source terminal ...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L27/04
Inventor 黄坤铭周学良朱翁驹吴成堡
Owner TAIWAN SEMICON MFG CO LTD