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GAS reaction inner tube with quartz nozzle protection components and reaction system

A technology of quartz nozzles and protective components, which is applied in the field of chemical vapor deposition process, and can solve the problems of gas gushing out in large quantities, tilting of quartz nozzles, exceeding the maximum concentration, etc.

Inactive Publication Date: 2008-02-20
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Due to the large vertical height of the three quartz nozzles, the tallest of which is about 1.2 meters, these quartz nozzles are prone to tilt without any support
Sometimes, due to the improper placement of the wafer in the crystal boat and the deviation from the axis of the crystal boat, as the crystal boat rotates, the protruding wafer will cut through the inclined quartz nozzle, resulting in a large amount of gas in the nozzle gushing out, causing the The gas concentration in the gas reaction tube rose sharply, exceeding the maximum concentration allowed by the normal vapor deposition process, and directly caused 170 wafers in the gas reaction tube to be completely scrapped irreparably
Such a huge loss is not willing to bear by any fab

Method used

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  • GAS reaction inner tube with quartz nozzle protection components and reaction system
  • GAS reaction inner tube with quartz nozzle protection components and reaction system
  • GAS reaction inner tube with quartz nozzle protection components and reaction system

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Embodiment Construction

[0022] The gas reaction inner tube and reaction system with quartz nozzle protection parts of the present invention will be further described in detail below with reference to the accompanying drawings.

[0023] Fig. 2 is a schematic diagram of the internal structure of the gas reaction system of the present invention, in which only one quartz nozzle is drawn for clarity of the drawing. Compared with Fig. 1, the gas reaction system shown in Fig. 2 mainly adds a quartz nozzle protective part 7, which is used to accommodate the quartz nozzle 4, and one side thereof is fixed on the inner side wall of the gas reaction inner tube 5 , and the other side extends toward the center of the gas reaction inner tube 5, thereby forming a blocking portion. After the gas reaction inner tube 5 is inserted into the circular support frame 3, the quartz nozzle 4 is accommodated in the protective component 7, so that any inclination of the quartz nozzle 4 can be avoided. If wafer 6 protrudes from...

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Abstract

The invention relates to a gas reacting inner tube with a protective part of quartz nozzle and the reacting system. In the prior gas reacting system, the quartz nozzle is easily cut by the protruded wafer, thus, the wafers in the gas reacting inner tube are discarded. The invention provides a gas reacting inner tube with a protective part of quartz nozzle, including a ring-shaped side wall; wherein, the inner wall of the gas reacting inner tube is equipped with a plurality of protective parts of quartz nozzle; the protective part is applied to hold a quartz nozzle, one end of the protective part is fixed on the inner wall of the gas reacting inner tube, while the other end shapes a protective component to prevent the hard article to contact with the quartz nozzle. In a trial application of the invention, a mask target is arranged on the external wall of the gas reacting inner tube. The invention has the advantages of simple structure and convenient installation; and the invention can effectively prevent the wafer cutting the quartz nozzle as well as be applied in the gas reacting system of different types.

Description

technical field [0001] The invention relates to a chemical vapor deposition process of a semiconductor process, and relates to a jig for protecting a quartz nozzle from being cut by a wafer, specifically, a gas reaction inner tube and a reaction system with a quartz nozzle protection component. Background technique [0002] Chemical vapor deposition (CVD) is a process of depositing gaseous compounds on a wafer substrate to form a coating. It is often used for the deposition of dielectric films, metal films, polycrystalline silicon films, etc., and is a very important link in the semiconductor process. . [0003] As shown in Figure 1, commonly used CVD equipment, such as the TEL CVD system provided by Tokyo Electron Co., Ltd., mainly consists of a manifold, a circular support ring, a boat, and three quartz nozzles (injectors). ), a gas reaction inner tube (inner tube) and a gas reaction outer tube (outer tube). The base 1 is used to carry the circular support frame 2 and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/00
Inventor 陈正敏任瑞龙姚洪伟梁毅刚
Owner SEMICON MFG INT (SHANGHAI) CORP
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