Unlock instant, AI-driven research and patent intelligence for your innovation.

Film forming apparatus and film forming method

A technology of film forming device and film forming chamber, which is applied in the direction of gaseous chemical plating, coating, electrical components, etc., and can solve the problems of not being able to obtain high quality, lack of oxygen, etc.

Inactive Publication Date: 2008-03-12
DOSHISHA CO LTD +1
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, when the raw material is supplied to the film-forming chamber in this way, since the raw material must be completely vaporized, it is necessary to form a film under high film-forming conditions of a vacuum degree below about 0.02 Torr, resulting in tantalum pentoxide (Ta 2 o 5 ) Oxygen deficiency in the film cannot obtain high-quality tantalum pentoxide (Ta 2 o 5 ) membrane such problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Film forming apparatus and film forming method
  • Film forming apparatus and film forming method
  • Film forming apparatus and film forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Embodiments of the film forming apparatus according to the present invention will be described below with reference to the drawings.

[0035] As shown in FIG. 1 , the film forming apparatus 1 according to the present embodiment forms tantalum pentoxide (Ta 2 O 5 ) film forming apparatus, which vaporizes a liquid raw material and deposits a thin film on the substrate 2 to form a film. The specific main structure includes: a film forming chamber 3 holding the substrate 2 inside, an injection valve 4 for directly injecting the liquid raw material into the film forming chamber 3 , and a raw material supply pipe 5 for supplying the liquid raw material to the injection valve 4 .

[0036] In this embodiment, an organic tantalum compound - tantalum pentaethoxide (Ta(OC 2 H 5 ) 5 ) and low-boiling point organic compound--n-pentane (n-C 5 H 12 ) mixture as liquid raw material. The tantalum pentaethoxide (Ta(OC 2 H 5 ) 5 ) and n-pentane (n-C 5 H 12 ) is stored in a con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A metal oxide film or a metal nitride film having less oxygen vacancy is formed at a high speed with excellent repeatability, and at the same time, an apparatus is reduced in sizes. The film forming apparatus is provided with a film forming chamber (3) for holding a substrate (2) inside, and an injection valve (4) for directly injecting a liquid material into the film forming chamber (3). The liquid material is a mixed solution composed of a metal compound and a low boiling point organic compound. A pressure in the film forming chamber (3) is permitted to be larger than a vapor pressure of the metal compound prior to being mixed with the low boiling point organic compound and smaller than a vapor pressure of the mixed solution.

Description

technical field [0001] The invention relates to a film forming device and a film forming method, in particular to a film forming device and a film forming method for forming a metal oxide film or a metal nitride film. Background technique [0002] Generally, in the process of chemical vapor deposition (CVD, Chemical Vapor Deposition), when gasifying liquid materials, the liquid materials are mainly vaporized by heating, and then the liquid materials are supplied under reduced pressure conditions. Thin films are deposited on the target substrate. [0003] Conventionally, metal compounds that are liquid at room temperature and have a vapor pressure of 1 Torr or less at 100°C, such as tantalum pentaethoxide (Ta(OC 2 H 5 ) 5 ), forming tantalum pentoxide (Ta 2 O 5 ) film, the tantalum pentaethoxide (Ta(OC 2 H 5 ) 5 ) becomes about 110°C, and the substrate temperature is heated to about 400°C to form a film. In such a case, it is necessary to vaporize the liquid raw mate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/31
CPCH01L21/02183H01L21/31637C23C16/45557H01L21/02271H01L21/02175H01L21/31604C23C16/4485H01L21/31
Inventor 千田二郎大岛元启石田耕三富永浩二
Owner DOSHISHA CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com