Objects of the present invention are to provide a novel
tantalum compound which enables to selectively form a
tantalum-containing thin film free of
halogen and the like, and various
tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element.The present invention relates to a
tantalum compound represented by the following formula (1)(In the formula, R1 represents a straight-chain
alkyl group having from 2 to 6 carbon atoms),or a
tantalum compound represented by the general formula (2)(In the formula, R2 represents a straight-chain
alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.The present invention further relates to form a tantalum-containing thin film by using a
tantalum compound represented by the following general formula (6)(In the formula, j, k, m and n is an integer of from 1 to satisfying j+k=5 and m+n=5, and R3 to R6 represent a
hydrogen atom, an
alkyl group having from 1 to 6 carbon atoms, and the like) as a
raw material.