55 results about "Tantalum compound" patented technology

Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 mΩcm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO₂ containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.

A method for fabricating a semiconductor device is provided. A ruthenium layer is formed on a semiconductor substrate in a processing chamber. A barrier layer is formed on the ruthenium layer supplying a halide-free precursor in the processing chamber. A metal layer such as an aluminum layer, an aluminum alloy layer, a tungsten layer, or a copper layer is formed on the barrier layer. The barrier layer is one of a TiN layer, a TaN layer, a WN layer, and an MoN layer. The TiN layer is one of formed by using an MOCVD process and an ALD process, and the halide-free precursor is a titanium compound selected from the group consisting of pentakis(diethylamino) titanium, tetrakis(diethylamino) titanium, tetrakis(dimethylamino)titanium, and pentakis(dimethylamino)titanium. The TaN layer is formed by using one of an MOCVD process and an ALD process, and the halide-free precursor is a tantalum compound selected from the group consisting of t-butyltrikis(diethylamino)tantalum, pentakis(diethylamino)tantalum, tetrakis(dimethylamino)tantalum, and pentakis(dimethylamino)tantalum.

The invention provides a method of manufacturing a porous anode for a solid electrolytic capacitor, comprising a step of subjecting a molded body containing powder of at least one material selected from oxygen-containing niobium material and oxygen-containing tantalum material and a pore-forming agent which is solid at reduction temperature to reduction reaction using reducing agent and another step of removing the pore-forming agent from the reduction reaction product and a solid electrolytic capacitor using an anode obtained thereby. As niobium material and tantalum material, at least one material selected from niobium, niobium alloy, niobium compound, tantalum, tantalum alloy and tantalum compound is used respectively. In the invention, the peak position, the number and quantity of pores can be optimized according to the cathode agent used, whereby a solid electrolytic capacitor having an improved property for impregnation with cathode agent, high capacitance, low ESR, good tan δ characteristics and long-term reliability, is obtained.

Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.

Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

The present invention relates to the tantalum powder and the process for preparing the same, and also relates to the electrolytic capacitor anode made of the tantalum powder. More particularly, the present invention relates to the tantalum powder having a BET surface area not more than 0.530 m²/g, Fisher mean particle size not less than 3.00 μm. The present invention relates to the process for preparing the tantalum powder, wherein the tantalum powder is prepared through reducing tantalum compound with a reducing agent, wherein the tantalum powder as seed is added during reduction, and said tantalum powder as seed is the tantalum powder that has been milled.

A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step. Particularly in a first polishing step of polishing copper wirings having a film made of tantalum or a tantalum compound as a barrier film, excellent selectivity will be obtained, dishing and erosion due to polishing are less likely to occur, and an extremely high precision flat surface of a semiconductor integrated circuit board can be obtained.

The invention discloses a tantalum doped nickel-cobalt-manganese lithium iron battery positive material and a preparation method thereof. The chemical expression of the tantalum doped nickel-cobalt-manganese-lithium iron battery positive material is LiaNixCoyMnzTabO2, wherein a is more than or equal to 1 and less than or equal to 1.2, x is more than or equal to 0.3 and less than or equal to 0.98,y is more than or equal to 0.01 and less than or equal to 0.6, z is more than or equal to 0.001 and less than or equal to 0.6, b equals to 4/5-a/5-3x/5-3y/5-3z/5, and b is more than or equal to 0.00001 and less than or equal to 0.2. According to the invention, a single crystal nickel-cobalt-manganese compound precursor and a tantalum compound are premixed at a superhigh speed, and the mixture of the single crystal nickel-cobalt-manganese compound precursor and the tantalum compound are mixed with a common poly-crystal nickel-cobalt-manganese precursor, so as to improve the mixing effect; sincea single crystal compound precursor is high in mechanical strength, superhigh-speed mixing can be adopted instead of breaking, and the single crystal compound precursor can play a role of a collisionmedium, so as to sufficiently scatter the tantalum compound and sufficiently mix doped elements and main elements.

A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.

Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element.

The present invention relates to a tantalum compound represented by the following formula (1)

(In the formula, R¹ represents a straight-chain alkyl group having from 2 to 6 carbon atoms),

or a tantalum compound represented by the general formula (2)

(In the formula, R² represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.

The present invention further relates to form a tantalum-containing thin film by using a tantalum compound represented by the following general formula (6)

(In the formula, j, k, m and n is an integer of from 1 to satisfying j+k=5 and m+n=5, and R³ to R⁶ represent a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, and the like) as a raw material.

A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step. Particularly in a first polishing step of polishing copper wirings having a film made of tantalum or a tantalum compound as a barrier film, excellent selectivity will be obtained, dishing and erosion due to polishing are less likely to occur, and an extremely high precision flat surface of a semiconductor integrated circuit board can be obtained.

The invention provides a gray control rod and an absorber. An absorber material comprises tantalum, a tantalum alloy or a tantalum compound, wherein the tantalum element occupies 30 to 99.8 percent of the mass percentage of the absorber material. The gray control rod is a slender solid tubular structure; and the gray control rod is made of the material comprising the tantalum, the tantalum alloy or the tantalum compound, wherein the tantalum element occupies 30 to 99.8 percent of the mass percentage of the absorber material. According to the invention, the tantalum, the tantalum alloy or the tantalum compound is adopted, so that the obtained tendency that the reactivity worth of the gray control rod is reduced along with the fuel consumption is obviously delayed; and the irradiation swelling and irradiation creep effects are also very low, so that the service life of a gray control rod assembly is greatly prolonged.

The invention provides a titanium-based composite material and a manufacturing method thereof. The titanium-based composite material is selected from alpha-phase pure titanium or titanium alloy parent metal, alpha-phase and beta-phase pure titanium or titanium alloy parent metal, beta-phase pure titanium or titanium alloy parent metal and Omega-phase mesoporous metal titanium parent metal; at least one ceramic powder enhanced composite material, which contains 10% of the components, of carbide, nitride, oxide or boride is added; or at least one ceramic powder enhanced composite material or one powder enhanced composite material composed of ferroelectric powder, which contains 10% of the components, of titanate, niobide, a barium compound, a strontium compound, a tantalum compound and a yttrium compound is added; or at least one magnetic powder enhanced composite material, which contains 10% of the components, of a neodymium-iron-boron compound or a samarium-cobalt compound is added; and the powder enhanced composite material and the titanium parent metal are mixed according to the total volume ratio of 10% to 70% and a mixture is processed in a casting, sintering or pressurizing manner to prepare the titanium-based composite material which has physical or chemical and electrical properties of the parent metal and the composite material.

The invention discloses a hollow nano fiber photocatalyst for a tantalum compound and a preparation method of the hollow nano fiber photocatalyst. The preparation method comprises the following steps: preparing a shell-core solution; carrying out electrostatic spinning by virtue of coaxial electrostatic spinning equipment, and drying a composite fiber, so as to obtain dried composite fiber; burning the dried composite fiber to obtain a Ta2O5 hollow fiber; and carrying out high-temperature nitridation on the Ta2O5 hollow fiber, and thus obtaining a Ta3N5 or TaON hollow nano fiber. The preparation method is simple to operate; and the hollow nano fiber photocatalyst with high photocatalytic activity, large specific surface area and easy-to-recover characteristic can be rapidly prepared.

The present invention relates to a transparent conductive layer, which comprises, based on a total weight of the transparent conductive layer, 0.01 - 10 wt% of an additive comprising a compound having at least one or two selected from the group that consists of tantalum, niobium and vanadium; and 90 - 99.99 wt% of an indium tin oxide (ITO).

A process for producing valve metal oxides, such as tantalum pentoxide or niobium pentoxide with a narrow particle size distribution within a desired particle size range, is provided. According to the process of the present invention, the valve metal fraction from digestion of valve metal material containing ore is processed under controlled temperature, pH, and residence time conditions to produce the valve metal pentoxide and pentoxide hydrates. Also, disclosed are new tantalum pentoxide and niobium pentoxide products and new tantalum pentoxide precursors and niobium pentoxide precursors.

A method by which tantalum compounds and niobium compounds dissolved in water such as a liquid detergent are insolubilized and recovered. An aqueous solution containing tantalum compounds and/or niobium compounds dissolved therein is regulated so as to have a pH and an oxidation-reduction potential E which satisfy E<60x(10-pH) to thereby insolubilize the tantalum compounds and/or niobium compounds. The tantalum compounds and/or niobium compounds thus insolubilized are recovered through a membrane treatment. Thus, the metal compounds can be more effectively recovered. This method is especially suitable for use in the treatment of a wastewater generated in the production of a tantalum powder or niobium powder through the reduction of a raw tantalum compound and/or raw niobium compound in a diluting salt.

The present invention provides a catalyst comprising (A) a tantalum compound, and (B) an organic metal compound, wherein the organic metal compound (B) comprises at least one group selected from the group consisting of the following (1) to (5): (1) a branched or cycloalkyl-substituted primary alkyl group having 4 to 15 carbon atoms, (2) an aryl-substituted primary alkyl group having 7 to 15 carbon atoms, (3) a 3-alkenyl group having 4 to 15 carbon atoms, (4) a secondary alkyl group having 3 to 15 carbon atoms which may be substituted with an aryl group or a cyclic alkyl group having 3 to 15 carbon atoms, and (5) a secondary alkenyl group having 4 to 15 carbon atoms, the catalyst showing good olefin trimerizing activity.

The invention relates to a method for producing organic amine tantalum compound with high purity, which comprises following steps: taking metallic tantalum and organic amine as raw materials, adding conductive agent in the organic amine as electrolyte, taking the metallic tantalum as an anode, adopting an electrochemical method of a 'sacrificial' anode to synthesize mixed solution of the organic amine tantalum compound and the organic amine, distilling the mixed solution, and lastly decompressing and distilling to obtain the organic amine tantalum compound with high purity. In the products of the organic amine tantalum compound which is obtained through adopting the method of the invention, impurity elements such as Al, As, B, Ba, Ca and the like are less than or equal to 0.0001%, Nb is less than or equal to 0.0010%, the purity of the products is more than 99.99%, the production process flow is short, the equipment is simple, and the production environment is friendly.