Method for measuring silicon base body and membrane base combination intensity

A technology that combines strength and silicon substrates. It is applied in the direction of measuring devices, semiconductor/solid-state device testing/measurement, and special data processing applications. It can solve problems such as complex construction, limited measurement accuracy, and inability to take into account the influence of liquid compression errors. Eliminate cumbersomeness and avoid the effect of carrier compression

Inactive Publication Date: 2008-03-19
SHANGHAI JIAO TONG UNIV
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  • Description
  • Claims
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Problems solved by technology

Due to the complexity of the sample preparation method and the construction of the test equipment, it is not easy to popularize and apply, the measurement accuracy will also be lim

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  • Method for measuring silicon base body and membrane base combination intensity
  • Method for measuring silicon base body and membrane base combination intensity
  • Method for measuring silicon base body and membrane base combination intensity

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Embodiment Construction

[0025] Below in conjunction with the embodiment of the present invention is described in detail: this embodiment is implemented under the premise of the technical solution of the present invention, has provided detailed implementation and process, but protection scope of the present invention is not limited to following embodiment.

[0026] This embodiment is implemented under the following implementation conditions and technical requirements:

[0027] The first step is the pretreatment of the parts to be tested. The components to be tested include: a single crystal silicon substrate and a silicon nitride film with a film thickness of 1 μm.

[0028] Or use the current very mature photolithography technology to make patterns on the silicon substrate on the back of the component to be tested. The pattern is designed as a circle.

[0029] Or use a wet etching method: transfer the pattern to the photoresist through the mask plate, after exposure and development, etched by hydrof...

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Abstract

The invention relates to a method to measure the bond strength of the silicon matrix and the membrane matrix in the measuring technical field. The method is realized by that a pattern with a window is made at the back of a silicon foundation base by an etching method, a part of foundation base is reserved as a loading platform in the window, a facial membrane of the foundation base is exposed in the back window, when the reserved matrix is pressed to break through the matrix and drive the membrane to break away with the matrix, a happened maximum normal displacement is recorded, a free energy releasing rate is gained by an prior formula, to characterize the bond strength of the membrane matrix system. The invention overcomes the shortage that the requirement of the observational measurement or the sample size of the prior detecting equipment is high, depends on the prior equipment and a mature sample making process, and uses a touching type back breaking through method to comparatively quickly detect the bond strength of the membrane matrix in the fixed quantity under a complex shape.

Description

technical field [0001] The invention relates to a method for measuring the technical field, in particular to a method for measuring the bonding strength between a silicon substrate and a membrane base. Background technique [0002] Silicon is widely used in the manufacture of computer chips and microelectromechanical systems. Silicon-based thin-film technology and thin-film performance also directly determine the stability and working life of chips and MEMS. Therefore, a unified evaluation standard and precise measurement method are needed for the bonding strength of silicon and thin film. The prior art includes four-point bending method, scratching method, indentation method and the like. Among them, the four-point bending method has been more common in industrial applications. It needs to make standard samples, relying on the separation of the film and the substrate when the sample is bent, and the cracks between the film and the substrate to calculate the bonding streng...

Claims

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Application Information

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IPC IPC(8): G01N19/04H01L21/66G06F19/00
Inventor 沈耀杨杰聂璞林沈志强蔡珣
Owner SHANGHAI JIAO TONG UNIV
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