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Semiconductor device including multi-bit memory cells and a temperature budget sensor

A multi-bit storage, storage unit technology, applied in static memory, read-only memory, digital memory information and other directions, can solve problems such as insufficient temperature specifications

Inactive Publication Date: 2008-04-09
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for many applications, this temperature specification is not sufficient

Method used

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  • Semiconductor device including multi-bit memory cells and a temperature budget sensor
  • Semiconductor device including multi-bit memory cells and a temperature budget sensor
  • Semiconductor device including multi-bit memory cells and a temperature budget sensor

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Embodiment Construction

[0020] In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of example specific embodiments in which the invention may be practiced. In this regard, directional terminology (eg, "top," "bottom," "front," "back," "front," "tail," etc.) is used with reference to the orientation of the depicted figures. Since elements in embodiments of the present invention may be oriented in many different orientations, the directional terms are used for illustration and not for limitation. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description should not be construed as limiting the invention, the scope of which is defined by the appended claims.

[0021] FIG. 1 is a block diagram illustrating one embodiment of a memory device 100 . Memory device 1...

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Abstract

One embodiment provides a semiconductor device including a plurality of multi-bit memory cells, a first temperature balance sensor, and a circuit. Each of the plurality of multi-bit memory cells can be programmed to each of two or more states. The circuit compares the first signal from the first temperature budget sensor with the first reference signal to obtain a first comparison result. The circuit refreshes a plurality of multi-bit storage devices according to the first comparison result.

Description

[0001] Cross References to Related Applications [0002] This patent application is related to US Patent Application Serial No. 11 / 436,358 entitled "PHASECHANGE MEMORY HAVING TEMPERATURE BUDGETSENSOR," filed May 18, 2006, the entire contents of which are incorporated herein by reference. Background technique [0003] One type of non-volatile memory is resistive memory. Resistive memory uses the resistance value of a memory element to store one or more bits of data. For example, a storage element programmed with a high resistance value may represent a logic "1" data bit value and a storage element programmed with a low resistance value may represent a logic "0" data bit value. Typically, the resistance value of the memory element is switched electrically by applying a voltage pulse or a current pulse. [0004] One type of resistive memory is phase change memory. Phase change memory uses a phase change material in a resistive memory element. Phase change materials exhibit at...

Claims

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Application Information

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IPC IPC(8): G11C11/56
CPCG11C13/0069G11C16/3431G11C13/0004G11C11/5678G11C13/0033G11C7/04G11C16/34G11C13/02
Inventor 托马斯·哈普扬·鲍里斯·菲利普
Owner INFINEON TECH AG
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