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Processing gas supplying mechanism, supplying method and gas processing unit

A technology for processing gas and gas processing, which is applied in the directions of exhaust devices, gas/liquid distribution and storage, chemical instruments and methods, etc., can solve problems such as the decline of total processing capacity, and achieve the effect of shortening processing time

Active Publication Date: 2008-04-09
TOKYO ELECTRON LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] However, recently, FPDs have been increasing in size, and even huge glass substrates exceeding 2 m on one side have appeared, and the processing chamber has also become larger. Therefore, if the processing gas supply method of the prior art is used, from It takes a long time to start supplying the processing gas until the pressure in the processing container reaches the set pressure, so there is a problem that the total processing capacity decreases

Method used

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  • Processing gas supplying mechanism, supplying method and gas processing unit
  • Processing gas supplying mechanism, supplying method and gas processing unit
  • Processing gas supplying mechanism, supplying method and gas processing unit

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Embodiment Construction

[0054] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0055] FIG. 1 is a schematic cross-sectional view of a plasma etching apparatus as one embodiment of a processing apparatus according to the present invention.

[0056] This plasma etching apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus for etching a glass substrate for FPD (hereinafter referred to simply as “substrate”) G as an object to be processed. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (Electro Luminescence; EL) display, a plasma display panel (PDP), and the like. The plasma etching apparatus 1 includes: a chamber 2 as a processing container for accommodating a substrate G, a processing gas supply mechanism 3 for supplying a processing gas into the chamber 2, an exhaust unit 4 for exhausting the chamber 2, and a generator. The processing gas supply mechanism 3 supplies the plas...

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Abstract

The invention relates to a treatment gas supplying mechanism, supplying method and gas treatment device, wherein the treatment gas supplying mechanism supplies treatment gas for making the treatment container at preset pressure in short time. The treatment gas supplying mechanism (3) comprises: a He gas supply resource (30) for supplying helium gas as treatment gas to a chamber (2) as treatment container of holding substrate; a treatment gas jar (33) for temporarily storing helium gas from the He gas supply resource (30); a treatment gas circulating parts (35) for supplying helium gas from the He gas supply resource (30) to the treatment gas jar (33) and supplying the helium gas from the treatment gas jar (33) to chamber (2), wherein the helium gas is temporarily stored in the treatment gas jar (33) from the He gas supply resource (30) through the treatment gas circulating parts (35) and supplied to the chamber (2) from the treatment gas jar (33).

Description

technical field [0001] The present invention relates to a processing gas supply mechanism, a processing gas supply method, and a gas processing apparatus provided with such a processing gas supply mechanism, in accordance with the regulations for a processing object such as a glass substrate for a flat panel display (FPD) accommodated in a processing container. The processing method supplies the processing gas into the processing container. Background technique [0002] In the FPD manufacturing process, plasma processing such as plasma etching equipment or plasma CVD film formation equipment is used to perform predetermined treatments such as etching treatment and film formation treatment on the glass substrate for FPD as the object to be processed. device. In a plasma processing apparatus, in general, a glass substrate is a processing gas generated by generating a high-frequency electric field while supplying a processing gas into the processing chamber while being placed ...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/02H01L21/205H01L21/3065H01L21/67C23F4/00C23C16/455C30B25/14H05H1/00H01J37/32F17D1/04C23C16/448
CPCC23C16/45565H01J9/38H01J11/34H01J11/50H01J11/54H01L21/3065
Inventor 佐藤亮齐藤均
Owner TOKYO ELECTRON LTD
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